Low-temperature heteroepitaxial growth of cubic SiC on Si using hydrocarbon radicals by gas source molecular beam epitaxy

Hatayama, Tomoaki; Tarui, Yoichiro; Fuyuki, Takashi; Matsunami, Hiroyuki

doi:10.1016/0022-0248(95)80077-p

Cited by 19 publications

(7 citation statements)

References 6 publications

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“…Great efforts have been made to reduce the deposition temperature, however, with simultaneous supply of Si-containing and carbon-containing precursors, it is reported that no single-crystalline SiC growth could be achieved below 1100 o C [17]. As an alternative method, by utilizing alternating supply or atomic layer epitaxy method, the growth temperature was reduced to around 1000 o C for both hetero-and homo-epitaxial growth of 3C-SiC, and the employed equipment including gas source molecular beam epitaxy (MBE) and LPCVD reactors [17][18][19][20][21][22][23]. These processes enable reduction in thermal mismatch stress and wafer bowing, especially for large diameter Si substrates.…”

Section: Introductionmentioning

confidence: 99%

“…With MBE reactor in use, the SiC growth was performed in the ultra high vacuum range between 10 -4 and 10 -3 Pa, the investigated Si-containing source was disilane (Si 2 H 6 ), and the carbon-containing sources were acetylene (C 2 H 2 ) and propane (C 3 H 8 ) [17][18][19][20][21]. MBE reactors are however much more complex and expensive than LPCVD reactors, and large batch LPCVD reactors will enable commercially viable SiC deposition on large diameter Si wafers, therefore, it is preferable to achieve the growth of single-crystalline SiC on Si substrate at lower temperature in a conventional LPCVD reactor.…”

Section: Introductionmentioning

confidence: 99%

“…In open literature, with the initial aim of depositing one monolayer SiC per cycle on Si substrates [21,24], alternating supply epitaxy was developed, but the results showed that the growth rate varied with processing parameters [17][18][19][20][21][22][23][24]. When Si 2 H 6 was employed as Si-containing precursor, the reported growth rate ranged from 0.28 to 1.31 nm/cycle [17][18][19]21,25].…”

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Growth of 3C–SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000 °C

et al. 2011

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To lower deposition temperature and reduce thermal mismatch induced stress, heteroepitaxial growth of single-crystalline 3C-SiC on 150 mm Si wafers was investigated at 1000 o C using alternating supply epitaxy. The growth was performed in a hot-wall low-pressure chemical vapour deposition reactor, with silane and acetylene being employed as precursors. To avoid contamination of Si substrate, the reactor was filled in with oxygen to grow silicon dioxide, and then this thin oxide layer was etched away by silane, followed by a carbonization step performed at 750 o C before the temperature was ramped up to 1000 o C to start the growth of SiC. Microstructure analyses demonstrated that single-crystalline 3C-SiC is epitaxially grown on Si substrate and the film quality is improved as thickness increases. The growth rate varied from 0.44 to 0.76 ± 0.02 nm/cycle by adjusting the supply volume of SiH 4 and C 2 H 2. The thickness nonuniformity across wafer was controlled with ± 1 %. For a prime

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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confidence: 99%

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Growth of 3C–SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000 °C

et al. 2011

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“…Therefore, the following doping mechanism is proposed. With the supply of SiH 4 , the Si atoms that are adsorbed on the SiC surface arrange themselves in self-assembled pattern, these Si atoms are only few atomic-layer thick and usually believed to present in reconstruction states [11,12,15]. This pattern is formed during SiH 4 supply and remains in place during the subsequent pump out period.…”

Section: Al Concentration and Doping Mechanism Investigationmentioning

confidence: 97%

“…Such high temperatures are not suitable for most applications because of dopant redistribution in the Si substrate and severe wafer bow due to accumulated thermal-mismatch stress at the SiC/Si heterojunction. To minimize these effects, alternating-supply/atomic-layer epitaxy (ASE/ ALE) was developed, which reduced the growth temperature of unintentionally doped 3C-SiC films to around 1000 1C [10][11][12][13][14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

Demonstration of p-type 3C–SiC grown on 150mm Si(100) substrates by atomic-layer epitaxy at 1000°C

Wang

Dimitrijev

Han

et al. 2011

Journal of Crystal Growth

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a b s t r a c tThe potential for enhancement of Si-based devices by growth of SiC films on large-diameter Si wafers is hampered by the very high temperatures (close to the Si melting temperature) that are needed for growth and doping by the existing techniques. Here, we present a unique doping method for growth of Al-doped single-crystalline 3C-SiC epilayers on 150 mm Si(1 0 0) substrates by atomic-layer epitaxy at 1000 1C using a conventional low-pressure chemical vapor deposition reactor. Al atomic concentration in the range of 2.8 Â 10 19 to 2.1 Â 10 20 cm À 3 , proportional to the supply volume of trimethylaluminium, is experimentally demonstrated. A doping mechanism, based on the supply sequence of precursors and reactor pressure, is proposed.

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Formation of Thin Au Films Using Negative-Ion-Beam Deposition

Heck

Chayahara

Tsubouchi

et al. 1997

phys. stat. sol. (a)

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An apparatus for the deposition of positive and negative ions (PANDA) has been developed. This facility permits single‐beam deposition or simultaneous positive‐ and negative‐ion‐beam deposition of a variety of species. Low‐impurity‐level films are expected to be produced with ion‐beam deposition due to the combination of beam mass‐analysis and ultra‐high‐vacuum conditions. A systematic study of the influence of beam energy on thin‐film growth processes is also possible with PANDA due to the fact that the energy of both beams can be varied over a wide range, from 10 eV to 20 keV. A study of gold films produced with deposition of low‐energy (50 to 200 eV) Au— ion beams produced with PANDA is reported in detail. The Au films have been analyzed with several techniques, such as Rutherford backscattering spectrometry, X‐ray diffraction and high‐resolution scanning electron microscopy.

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Low-temperature heteroepitaxial growth of cubic SiC on Si using hydrocarbon radicals by gas source molecular beam epitaxy

Cited by 19 publications

References 6 publications

Growth of 3C–SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000 °C

Growth of 3C–SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000 °C

Demonstration of p-type 3C–SiC grown on 150mm Si(100) substrates by atomic-layer epitaxy at 1000°C

Formation of Thin Au Films Using Negative-Ion-Beam Deposition

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