Low temperature hole mobility in strained p-Si/Si1−xGex/p-Si selectively doped double heterojunctions

Hionis, G.; Triberis, G. P.

doi:10.1006/spmi.1998.0570

Cited by 6 publications

(7 citation statements)

References 11 publications

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“…Although a single band effective-mass approximation has been used at T = 0 K by several researchers [1][2][3] for the general investigation of the quasi-two-dimensional hole gas present in the pseudomorphic Si/Si 1−x Ge x system, a multiband effective-mass approximation has to be employed to describe either the 8 or the 8 and 7 valence bands and strain effect has to be included. This approach leads to non-parabolicities because of the band mixing away from k = 0, described by the non-diagonal terms of the Hamiltonian and because of the stress present in the system.…”

Section: Introductionmentioning

confidence: 99%

Hole subband non-parabolicities in strained Si/Si1−xGexquantum wells

Hionis

Triberis

1998

Superlattices and Microstructures

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Section: Introductionmentioning

confidence: 99%

Hole subband non-parabolicities in strained Si/Si1−xGexquantum wells

Hionis

Triberis

1998

Superlattices and Microstructures

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“…When the second subband becomes populated the values of the mobilities presented in Fig. 8 are the mean mobilities 31 ϭ ͚ (n) N 1D (n) (n) 2 ͓ ͚ (n) N 1D (n) (n) ͔ Ϫ1 , where (n) and N 1D (n) are the mobility and the electron concentration in the nth subband (nϭ1,2). As the concentration increases the mobility increases up to the point where the second subband starts to become populated.…”

Section: Resultsmentioning

confidence: 99%

Mobility in V-shaped quantum wires due to interface roughness and alloy scattering

Tsetseri

Triberis

2004

Phys. Rev. B

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The low temperature mobility in V-shaped AlGaAs/GaAs quantum wires is theoretically investigated. The energy eigenstates and the eigenvalues of the system under study are calculated using a finite difference method. The cartography of the interface allows for realistic values of the rms value of the roughness fluctuations in depth and the autocorrelation length. For one subband occupation we calculate the screened and the unscreened mobility due to the interface roughness scattering. The corresponding mobility exhibits ultrahigh values. We also evaluate the mobility due to alloy scattering. The interface roughness turns out to be the dominant scattering mechanism. When the second electronic subband becomes populated, we investigate the intrasubband and intersubband scattering due to interface roughness, taking into account or excluding screening effects. Comparison is made with other reports.

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“…It was sometime assumed [22][23][24] that an interface is rough, while the other one is flat (1-interface scattering). As an example, under growth with interruption, the bottom interface is rough, while the top one is flat.…”

Section: Basic Equationsmentioning

confidence: 99%

Two-Side Doping Effects on the Mobility of Carriers in Square Quantum Wells

et al. 2011

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We presented a theoretical study of the effects from two-side (2S) doing on low-temperature lateral transport in square quantum wells (QWs). Within a variational approach, we obtained analytic expressions for the carrier distribution, screening function, and autocorrelation functions for various scattering mechanisms. We found that the mobility of a 2S-doped square QW is larger than that of the one-side (1S) doped counter part for scattering from both interfaces or from the top interface. However, the former is smaller than the latter for scattering from the bottom (substrate-side) interface. The mobility of a 2S-doped square QW exhibits a well-width evolution slower than the power-of-six law characteristic of the undoped QW. The mobility may be enhanced by 2S doping. We examine the dependence of the enhancement factor on QW parameters for optimization of the structure. This factor may achieve an order of magnitude, which is much larger than that provided by earlier methods. Our theory is able to reproduce recent experimental data on transport in 2S-doped narrow square QWs, e.g., the mobility dependence on well width and the enhancement factor, which have not been explained so far.

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Low temperature hole mobility in strained p-Si/Si1−xGex/p-Si selectively doped double heterojunctions

Cited by 6 publications

References 11 publications

Hole subband non-parabolicities in strained Si/Si1−xGexquantum wells

Hole subband non-parabolicities in strained Si/Si1−xGexquantum wells

Mobility in V-shaped quantum wires due to interface roughness and alloy scattering

Two-Side Doping Effects on the Mobility of Carriers in Square Quantum Wells

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