Low temperature identification of interfacial and bulk defects in Al/SiO/sub 2//Si capacitor structures by electron beam induced current

Electrical current distribution across a metal–insulator–metal structure during bistable switching

“…This contrast enhancement is true for MOS devices [18], but especially so in MIM structures. As an example two enlarged sections of the surface of the memory cell measured above are displayed in Fig.…”

“…The injected carriers are subject to drift, diffusion, trapping and recombination events. The formation of a space charge region at the interface with the bulk Si (p-type or n-type) separates the electron-hole pairs created by each absorbed electron, resulting in a large current gain [18]. The output signal can be amplified by several orders of magnitude.…”

“…The interesting observation is that their number is larger than the EBIC spots observed in the prebreakdown regime but all EBIC spots correspond to a "burned" channel. The general coincidence of breakdown sites with defects such as stacking faults and the contrast mechanisms at these sites have been studied by many researchers but almost exclusively in gate oxides grown on Si [17,18,19,20,21].…”

“…Electron-beam-induced current method EBIC has primarily been used to investigate the electrical properties of metal-oxide-semiconductor (MOS) capacitors, focussing on the leakage and breakdown properties of oxide thin films grown on Si [17,18,19,20,21]. In those cases an internal electrical field allows the specimen to act as detector of the charge carriers generated by the incident electron beam.…”

Characterization of Interfaces between HfO2 Thin Film and Metal Electrode with Pre–Post Treatments

“…A thickness were deposited on SiO 2 / Si [20][21][22][23][24] at 630 C in a mixture of TiCl 4 , NH 3 , and N 2 gases at a stable chamber pressure of 20 mTorr by varying N 2 gas flow rate. We deposited the dielectric materials, i.e., HfO 2 films of 50…”