Low temperature–low hydrogen content silicon nitrides thin films deposited by PECVD using dichlorosilane and ammonia mixtures

Photoluminescence properties of SiNx/Si amorphous multilayer structures grown by plasma-enhanced chemical vapor deposition

“…The thickness of the nc-Si layers was controlled by deposition time (20 and 30 s). Si 3 N 4 barriers were deposited using an SiH 2 Cl 2 /NH 3 /Ar mixture with [NH 3 ]/[SiH 2 Cl 2 ] flow ratio of 2.5 at 350 mTorr and 30 W. The details on the structural and dielectric properties of these SiN x films are reported elsewhere [8]. The deposition time for all the SiN x layers was 2 min, except for the first and last layers of the whole superlattice, which was of 5 min.…”

Influence of the surrounding host in obtaining tunable and strong visible photoluminescence from silicon nanoparticles

“…9 Before deposition, the 1 ϫ 1 cm silicon slices were etched in diluted hydrofluoric acid ͑5% HF͒ for removing the surface native oxide. 9 Before deposition, the 1 ϫ 1 cm silicon slices were etched in diluted hydrofluoric acid ͑5% HF͒ for removing the surface native oxide.…”

Oxidation of PECVD SiNx thin films

“…5 shows the FTIR measurements of the four films. The FTIR spectra showed absorbance peaks corresponding to the N-H bond, Si-O bond and Si-N bond [3,25,26]. It is seen that the as-deposited film contained both N-H and Si-N bonds.…”

“…Their typical uses include the fabrication of thin suspended structures as membranes and cantilevers in micro-mechanical sensors and actuators, such as pressure sensors, condenser microphones, accelerometers and optical mirrors [1][2][3][4]. They are also widely used in the passivation of integrated circuits and gate insulators [5][6][7][8][9].…”

“…The process of low-temperature plasma deposition of SiN x films generally involves reactions between SiH 4 , NH 3 , and N 2 gas mixtures. The deposition chemistry is detailed elsewhere [14,15].…”