Photoluminescence properties of SiNx/Si amorphous multilayer structures grown by plasma-enhanced chemical vapor deposition

Monroy, B.M.; Santana, G.; Aguilar‐Hernández, J.; Benami, Abdellah; Fandiño, J.; Ponce, Arturo; Contreras‐Puente, G.; Ortíz, A.; Alonso, Juan Carlos

doi:10.1016/j.jlumin.2006.08.046

Cited by 15 publications

(10 citation statements)

References 13 publications

(18 reference statements)

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“…As can be seen fromtable 2, variation in the Cl and H 2 concentrations canbe seen and thisresultsindifferences in the overall structure formation of the thin film, which could change the refractive index value as seen in figure 6. UV-excitation on selected samples, figure 7, presented a bright white photoluminescence spectra at room temperature (with the naked eye in the lighted room) and the emission was consistent with the quantum confinement effect model in Si-QDs [9,10,12] observed from QDs in figure 5. Since we obtain a broad emission in all the visible range, this sample would be a very good candidate for down shifting applications and antireflection coating in silicon-based solar cells.…”

Section: Optical Characterizationsupporting

confidence: 79%

“…Stability is one of the most important parameters for the application in thephotovoltaic devices industry. Excess of Cl incorporated into the thin films could cause degradation in the chemical stability due to the hydrolysis reactions that occur with moisture present in the environment to generate HCl or ammonia salts, promoting an oxidation process [12]. Stability was monitored by periodic FTIR measurements.…”

Section: Resultsmentioning

confidence: 99%

“…It has been observed that the size dispersion, densityand crystallinity of as-grown Si-QDs depends mainly on the type of precursor gases used during the plasma enhanced chemical vapour deposition (PECVD) process. However, there are rare reports that have analysed the growth mechanism of SiN x films by PECVD using SiH 2 Cl 2 and NH 3 as precursors [12].There is evena recent study related to the theoretical explanation of the passivation of silicon quantum dots by halide atoms [13].…”

Section: Introductionmentioning

confidence: 99%

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Experimental and theoretical rationalization of the growth mechanism of silicon quantum dots in non-stoichiometric SiN_x: role of chlorine in plasma enhanced chemical vapour deposition

Mon-Pérez¹,

Salazar²,

Ramos³

et al. 2016

Nanotechnology

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Silicon quantum dots (Si-QDs) embedded in an insulator matrix are important from a technological and application point of view. Thus, being able to synthesize them in situ during the matrix growth process is technologically advantageous. The use of SiHCl as the silicon precursor in the plasma enhanced chemical vapour deposition (PECVD) process allows us to obtain Si-QDs without post-thermal annealing. Foremost in this work, is a theoretical rationalization of the mechanism responsible for Si-QD generation in a film including an analysis of the energy released by the extraction of HCl and the insertion of silylene species into the terminal surface bonds. From the results obtained using density functional theory (DFT), we propose an explanation of the mechanism responsible for the formation of Si-QDs in non-stoichiometric SiN starting from chlorinated precursors in a PECVD system. Micrograph images obtained through transmission electron microscopy confirmed the presence of Si-QDs, even in nitrogen-rich (N-rich) samples. The film stoichiometry was controlled by varying the growth parameters, in particular the NH/SiHCl ratio and hydrogen dilution. Experimental and theoretical results together show that using a PECVD system, along with chlorinated precursors it is possible to obtain Si-QDs at a low substrate temperature without annealing treatment. The optical property studies carried out in the present work highlight the prospects of these thin films for down shifting and as an antireflection coating in silicon solar cells.

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Section: Optical Characterizationsupporting

confidence: 79%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Experimental and theoretical rationalization of the growth mechanism of silicon quantum dots in non-stoichiometric SiN_x: role of chlorine in plasma enhanced chemical vapour deposition

Mon-Pérez¹,

Salazar²,

Ramos³

et al. 2016

Nanotechnology

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“…This effect could deteriorate the interface between the pm-Si film and the substrate, which would be prejudicial to integrated device performance [1]. Recently, we have observed that the use of dichlorosilane as precursor gas in the PECVD process introduces the possibility of obtaining nanocrystalline silicon inclusions in an amorphous matrix at low deposition temperatures and without the need of thermal annealing [7][8][9]. The interaction between the growing surface and reactive hydride and chloride radicals present in the hydrogen-rich plasma results in films that are a mixture of an amorphous matrix and different crystalline silicon formations (nc-Si and μc-Si), depending on the deposition conditions.…”

Section: Introductionmentioning

confidence: 99%

Polymorphous silicon thin films obtained by plasma-enhanced chemical vapor deposition using dichlorosilane as silicon precursor

et al. 2009

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Polymorphous silicon thin films (pm-Si) have been deposited from mixtures of dichlorosilane and hydrogen, using argon as the diluting gas by plasma-enhanced chemical vapor deposition. The deposition conditions were chosen to simultaneously obtain both Si nanocrystallites and an amorphous silicon matrix in the as-grown samples. High resolution transmission electron microscopy studies show the crystallinity of Si domains whose dimensions are in the interval of 2-14 nm. The surface passivation state of the silicon nanocrystals was inferred from Fourier transform infrared spectroscopy analysis. Two optical absorption edges, corresponding to the amorphous matrix and the Si nanocrystals, were observed for all the pm-Si thin films. Intense visible photoluminescence was observed for the as-grown samples. The possibility of using these thin films for the down-conversion effect in silicon solar cells is discussed.

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“…When the film is annealed at high temperature, the silicon dangling bonds are well passivated by N atoms because of decomposition of the N-H bonds. 13 This way, the PL peak at 521 nm totally disappears in the annealed film. Strong red emission is observed in both the as-deposited and annealed films.…”

Section: Resultsmentioning

confidence: 93%

Red emission from nano-silicon nitride multilayer films prepared using hot-wire chemical vapor deposition

Panchal¹,

Solanki

2012

Proceedings of the Institution of Mechanical Engineers, Part N:

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Ultrathin silicon nitride multilayer films were prepared by varying silane/ammonia flow ratios 1/10 and 1/20 alternately in a silicon nitride hot-wire chemical vapor deposition chamber. Some films were annealed at 1000°C for 1 h in an argon environment. Cross-sectional transmission electron microscopy shows~6 nm silicon clusters formed in the annealed film. Strong visible red emission in the wavelength range 810-820 nm was detected from the films when excited with the 325 nm He-Cd laser excitation. A blueshift in the photoluminescence of the annealed film with respect to the as-deposited film is attributed to the silicon quantum confinement due to the presence of silicon clusters. Disappearance of the photoluminescence peak at 521 nm related to silicon dangling bonds in the annealed film in comparison with the as-deposited film was confirmed by the photoluminescence measurements.

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Photoluminescence properties of SiNx/Si amorphous multilayer structures grown by plasma-enhanced chemical vapor deposition

Cited by 15 publications

References 13 publications

Experimental and theoretical rationalization of the growth mechanism of silicon quantum dots in non-stoichiometric SiN_x: role of chlorine in plasma enhanced chemical vapour deposition

Experimental and theoretical rationalization of the growth mechanism of silicon quantum dots in non-stoichiometric SiN_x: role of chlorine in plasma enhanced chemical vapour deposition

Polymorphous silicon thin films obtained by plasma-enhanced chemical vapor deposition using dichlorosilane as silicon precursor

Red emission from nano-silicon nitride multilayer films prepared using hot-wire chemical vapor deposition

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Photoluminescence properties of SiNx/Si amorphous multilayer structures grown by plasma-enhanced chemical vapor deposition

Cited by 15 publications

References 13 publications

Experimental and theoretical rationalization of the growth mechanism of silicon quantum dots in non-stoichiometric SiNx: role of chlorine in plasma enhanced chemical vapour deposition

Experimental and theoretical rationalization of the growth mechanism of silicon quantum dots in non-stoichiometric SiNx: role of chlorine in plasma enhanced chemical vapour deposition

Polymorphous silicon thin films obtained by plasma-enhanced chemical vapor deposition using dichlorosilane as silicon precursor

Red emission from nano-silicon nitride multilayer films prepared using hot-wire chemical vapor deposition

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Experimental and theoretical rationalization of the growth mechanism of silicon quantum dots in non-stoichiometric SiN_x: role of chlorine in plasma enhanced chemical vapour deposition

Experimental and theoretical rationalization of the growth mechanism of silicon quantum dots in non-stoichiometric SiN_x: role of chlorine in plasma enhanced chemical vapour deposition