Low temperature method to passivate oxygen vacancies in un-doped ZnO films using atomic layer deposition

Wang, Yue; Kang, Kyung Mun; Kim, Minjae; Park, Hyung Ho

doi:10.1016/j.tsf.2018.03.003

Cited by 17 publications

(15 citation statements)

References 43 publications

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“…Previous works had also observed the preferred growth orientation of (002) in ZnO thin films prepared by the ALD method using DEZ and H 2 O 2 with concentrations of 30 to 50%. 28,30,31) For ALDprepared ZnO prepared using DEZ and H 2 O, normally, the growth orientation corresponds to the mixed planes of (100) and (002). 12) A previous work had suggested that the preferred growth orientation of the ALD-prepared ZnO films could be controlled by controlling the oxygen precursor, and that the transformation from the (100) to (002) growth orientation could be achieved by pulsing additional oxygen gas before pulsing H 2 O.…”

Section: Characterization Methodsmentioning

confidence: 99%

“…For the ZnO-H 2 O 2 -0% (ZnO-H 2 O) system, the higher (002) XRD intensity (compared to the XRD intensity of the ZnO-H 2 O 2 -(10% to 50%) system) could be attributed to the higher film crystallinity in the former than in the latter, as predicted in previous works. 30,31) For the ZnO-H 2 O 2 -(10% to 50%) systems, the increased concentration of H 2 O 2 could result in an enhanced oxygen-rich environment, which could further lead to an enhanced (002) XRD diffraction intensity. 33) The low XRD intensity in the ZnO-H 2 O 2 -10% and ZnO-H 2 O 2 - 20% samples could also be attributed to their transition stages in the transition process from the coexistence of (100) and (002) to the existence of a unique (002)-oriented ZnO film.…”

Section: Characterization Methodsmentioning

confidence: 99%

“…Previous results had indicated that the use of H 2 O 2 as an oxygen precursor could provide an O-rich growth environment and could passivate the formation of V o . 30,31) A decrease in the PL emission intensity at approximately 540 to 630 nm indicated a decrease in the oxygen and zinc-related defects. Additional analyses with the Hall properties of carrier concentration are provided in the next section.…”

Section: Photoluminescence Propertiesmentioning

confidence: 99%

“…H 2 O 2 of different concentrations (30%50%) has been used for the preparation of ZnO and TiO 2 using the ALD method. [27][28][29][30][31] However, there has been no detailed report on how the H 2 O 2 concentration influences the amount of V o and the properties of the ZnO films produced using this method. Therefore, in this work, we focus on V o passivation and the related optoelectronic Z properties dependent on the different H 2 O 2 concentrations used in the ALD method.…”

Section: Introductionmentioning

confidence: 99%

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Effective Oxygen-Defect Passivation in ZnO Thin Films Prepared by Atomic Layer Deposition Using Hydrogen Peroxide

Wang

Kang

Kim

et al. 2019

J. Korean Ceram. Soc

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The intrinsic oxygen-vacancy defects in ZnO have prevented the preparation of p-type ZnO with high carrier concentration. Therefore, in this work, the effect of the concentration of H 2 O 2 (used as an oxygen source) on the oxygen-vacancy concentration in ZnO prepared by atomic layer deposition was investigated. The results indicated that the oxygen-vacancy concentration in the ZnO film decreased by the oxygen-rich growth conditions when using H 2 O 2 as the oxygen precursor instead of a conventional oxygen source such as H 2 O. The suppression of oxygen vacancies decreased the carrier concentration and increased the resistivity. Moreover, the growth orientation changed to the (002) plane, from the combined (100) and (002) planes, with the increase in H 2 O 2 concentration. The passivation of oxygen-vacancy defects in ZnO can contribute to the preparation of p-type ZnO.

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Section: Characterization Methodsmentioning

confidence: 99%

Section: Characterization Methodsmentioning

confidence: 99%

Section: Photoluminescence Propertiesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Effective Oxygen-Defect Passivation in ZnO Thin Films Prepared by Atomic Layer Deposition Using Hydrogen Peroxide

Wang

Kang

Kim

et al. 2019

J. Korean Ceram. Soc

Self Cite

View full text Add to dashboard Cite

show abstract

“…H 2 O 2 oxidant provides more oxygen-rich conditions than commonly used H 2 O precursor to passivate defects oxygen vacancies (V O ) and zinc interstitials (Zn i ) in ALD-grown ZnO films at low growth temperatures from 80 to 150 °C. Columnar surface morphologies with (002) preferential orientation of growth plane occurred when the use of oxidant is altered from H 2 O to H 2 O 2 [ 2 ]. H 2 O 2 oxidant increases the growth rates by approximately 70% as compared with using O 3 gas reactant of ALD-grown ZnO at 200 °C.…”

Section: Introductionmentioning

confidence: 99%

Co-dosing Ozone and Deionized Water as Oxidant Precursors of ZnO Thin Film Growth by Atomic Layer Deposition

et al. 2020

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Characteristics of atomic layer deposition (ALD)-grown ZnO thin films on sapphire substrates with and without three-pulsed ozone (O 3 ) as oxidant precursor and post-deposition thermal annealing (TA) are investigated. Deposition temperature and thickness of ZnO epilayers are 180 °C and 85 nm, respectively. Post-deposition thermal annealing is conducted at 300 °C in the ambience of oxygen (O 2 ) for 1 h. With strong oxidizing agent O 3 and post-deposition TA in growing ZnO, intrinsic strain and stress are reduced to 0.49% and 2.22 GPa, respectively, with extremely low background electron concentration (9.4 × 10 15 cm −3 ). This is originated from a lower density of thermally activated defects in the analyses of thermal quenching of the integrated intensity of photoluminescence (PL) spectra. TA further facilitates recrystallization forming more defect-free grains and then reduces strain and stress state causing a remarkable decrease of electron concentration and melioration of surface roughness.

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A mechanistic approach to determine the relationship between film structure, electronic properties, and photocatalytic activity of ALD ZnO thin films on glass gibers

Arat,

Akyildiz

2024

J Mater Sci: Mater Electron

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Atomic layer deposition (ALD), a high-conformality thin-film deposition technique, offers the opportunity to immobilize photocatalytic materials on high surface area substrates. Textile substrates are inexpensive, easily accessible materials with a fibrous nature, making them high surface area scaffolds for photocatalytic applications. This study applied ZnO thin-film coatings to fabric structures with different numbers of ALD cycles. The effect of coating thickness on the surface and electronic properties of the films and their photocatalytic properties were investigated. SEM, XRD, PL, and UV–Vis were used to examine the surface morphology, crystal structure, defects, and optical properties of the ZnO thin films. As the film thickness increased, the crystal sizes and the number of defects in the structure increased. Contact angle and Hall Effect measurements revealed that these structural defects are present on the surface of the films. Optimum wettability, mobility, and photocatalytic efficiency values were observed in the 15-nm coated samples, resulting in the highest photocatalytic activity and a turning point.

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Low temperature method to passivate oxygen vacancies in un-doped ZnO films using atomic layer deposition

Cited by 17 publications

References 43 publications

Effective Oxygen-Defect Passivation in ZnO Thin Films Prepared by Atomic Layer Deposition Using Hydrogen Peroxide

Effective Oxygen-Defect Passivation in ZnO Thin Films Prepared by Atomic Layer Deposition Using Hydrogen Peroxide

Co-dosing Ozone and Deionized Water as Oxidant Precursors of ZnO Thin Film Growth by Atomic Layer Deposition

A mechanistic approach to determine the relationship between film structure, electronic properties, and photocatalytic activity of ALD ZnO thin films on glass gibers

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