Low temperature oxidation of crystalline silicon using excimer laser irradiation

Nayar, V.; Boyd, Ian W.; Goodall, Francis; Arthur, Graham G.

doi:10.1016/0169-4332(89)90906-9

Cited by 14 publications

(3 citation statements)

References 9 publications

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“…Moreover, hightemperature processing should be avoided for MOS devices realized on high mobility substrates such as strained Si/SiGe to prevent relaxation of strain. Thus, various techniques to realize SiO 2 at a comparatively lower temperature are gaining a lot of research interest these days and one such low-temperature oxidation technique is laser-induced oxidation (LIO) [4][5][6][7][8][9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

“…The use of continuous wave lasers to directly oxidize silicon was first reported by Gibbons [4]. There have been many other reports to study the mechanism of oxide formation by LIO [5][6][7][8][9][10]. Boyd et al has proposed that the increased carrier population due to the absorption of laser radiation weakens more Si-Si bonds and enhances the rate of oxidation [5,6].…”

Section: Introductionmentioning

confidence: 99%

“…Boyd et al has proposed that the increased carrier population due to the absorption of laser radiation weakens more Si-Si bonds and enhances the rate of oxidation [5,6]. Nayar et al [9] and Orlowski and Mantell [10] have reported that oxide growth is due to the self-limiting diffusion of O atoms produced by photo dissociation of O 2 . However, in all these reported techniques the substrate was maintained at a temperature higher than room temperature (673-748 K).…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Growth of ultra-thin SiO₂by laser-induced oxidation

Kailath¹,

DasGupta²,

DasGupta³

et al. 2009

Semicond. Sci. Technol.

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Pulsed laser-induced oxidation (LIO) has been suggested as an emerging technique to grow SiO 2 at room temperature. LIO of silicon in a mixture of oxygen and nitrogen under different proportions has been studied in detail. The effect of the partial pressure of oxygen and nitrogen gases on the quality as well as the thickness of the oxide grown has been studied. Also, the oxidation has been carried out in the presence of dc discharge inside the growth chamber and its effect on the oxide properties has been discussed. Higher values of ramped breakdown field strength, characteristic life-time and lower leakage current have been obtained for oxide grown in the presence of dc discharge. However, LIO without dc discharge offers a significant advantage in terms of the thickness of the oxide grown. The optimized LIO process has been used to grow ultra-thin (<1 nm) oxide on silicon with good control and the electrical characteristics of the resulting MIS structure have been studied in detail.

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