The conductance technique can be used to separate two types of fast interface state differentiated by a factor of about 20 ratio in capture cross section. By comparing vacuum annealed oxides, which are dominated by b defects, with radiation damaged oxides, we infer that the two types are acceptor and donor states. The conductance measurements are unable to separate and b1 on the (100) surface. In vacuum annealed samples, the conductance peak broadening is dominated by surface potential fluctuations, whereas radiation damaged samples have an intrinsically broadened cross section over and above that due to the potential fluctuations.

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Oxynitrides on (100) silicon grown in a N2O ambient have been 60Co gamma irradiated. The conductance technique has been used to show that irradiation under bias can produce lateral charge nonuniformities at the Si:SiO2 interface. The ratio of induced fast to slow interface state density was found to be roughly independent of bias and nitridation, suggesting a common origin for these two types of defects.

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