Low-temperature photoluminescence characterization of hydrogen- and helium-implanted silicon

Ulyashin, A.; Job, R.; Fahrner, W. R.; Mudryi, A. V.; Patuk, A. I.; Shakin, I. A.

doi:10.1016/s1369-8001(00)00115-3

Cited by 15 publications

(14 citation statements)

References 11 publications

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“…According to traditional point of view the reason of more enhanced photoluminescence feature of the Si phases than unstrained bulk Si can been ascribed to dislocations. 8,12,13 If we suggest that voids can be formed upon ion implantation, or exist in poly-, multi-crystalline and porous Si then the regions with elongated Si-Si bonds could be formed around the voids. Those regions of Si can be direct band gap and radiative recombination of free carriers in these regions can be more enhanced than those in other unstrained ones.…”

Section: Discussionmentioning

confidence: 99%

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Strain-induced modulation of band structure of silicon

Karazhanov

Davletova²,

Ulyashin

2008

Journal of Applied Physics

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This work presents ab initio study of strain-induced modulation of band structure of Si.It is shown that at straining pressures >12 GPa band structure of Si can be turned from indirect to direct. Both the bottommost conduction band and topmost valence band are located at the Γ point. The conduction band minimum at the Γ point of the strained Si is found to be much more dispersive than that at the X point of the unstressed Si.Consequently, electrical conductivity through the Γ valley is suggested to be more superior than the X point of the unstressed Si. Barrier height, which is needed to transfer electrons in the Γ point to X/L points or from X/L to Γ point have been calculated. The results have been applied to explain peculiarities of electronic structure and light emission of Si based materials containing dislocations and voids.

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Section: Discussionmentioning

confidence: 99%

“…8,13 The direct band gap of the group of atoms can be responsible for the luminescent features of the ion implanted Si, which previously have been ascribed to dislocations.…”

Section: Band Structure Of Si With a Nanodot And Nanowire Formed By Amentioning

confidence: 99%

Strain-induced modulation of band structure of silicon

Karazhanov

Davletova²,

Ulyashin

2008

Journal of Applied Physics

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“…It is found that the thus obtained Si p-n junction can emit the light even at room temperature in the wavelength range, corresponding to dislocations (the so-called D1-D4 lines). Dislocation-related luminescence has been observed also upon implantation of H and He [3], O [4], Si in single crystalline Si [5] and multicrystalline Si [6]. It is interesting to note that light emission from Si at room temperature has been reported [7] in dislocation free Si also due to self-compression of electron-hole gas.…”

Section: Introductionmentioning

confidence: 91%

Sensitivity of dislocation engineered Si p-n junctions to influence of illumination and ultrasound

Davletova

Karazhanov

2009

Inorg Mater

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“…(wi th the qua si-conti nuous buri ed SiO 2 l ayer [9]) i ndi cate stro ng PL at about 1.02 eV, simi l ar to tha t detected i n anneal ed hydro gen-and heli um -im pla nted sil i con, presum abl y rel ated to som e poi nt defects [10]. The PL p eak at 1.1 eV corresponds to ba nd-to -ba nd tra nsiti on; i ts intensi ty is hi gher for the sam pl es of hi gher structura l p erfecti on.…”

Section: Introductionmentioning

confidence: 95%

“…Poi n t defects l ocated at the i nterf ace form sma ll preci pi tates gettered at the di slo cati ons. annealed / treated at 1400 K for 5 h. A | at 10 5 Pa; B | at 0.6 GPa; C | at 1.14 GPa. The HT{ HP trea tm ent of Si:O i m pl anted wi th D = 2 È 1 0 1 8 cm À 2 resul ts i n X-ra y di˜use scatteri ng of l ow i ntensi t y (Fi g. 6).…”

Section: Introductionmentioning

confidence: 99%