Low‐temperature poly‐Si TFT transferred onto plastic substrates by using surface free technology by laser ablation/annealing (SUFTLA®)

Utsunomiya, Sumio; Inoue, Satoshi; Shimoda, Tatsuya

doi:10.1889/1.1827846

Cited by 25 publications

(18 citation statements)

References 11 publications

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“…6 Moreover, it is also possible to fabricate them on many types of the plastic substrates by using device transfer such as Suftla 10 without drastic modifications of the above-mentioned fabrication process. 7,8 The measurement system is shown in Fig. 1.…”

Section: Methodsmentioning

confidence: 99%

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Evaluation of thin‐film photodevices and application to an artificial retina

Kimura¹,

Shima²,

Yamashita³

et al. 2008

J Soc Info Display

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Abstract— First, conventional poly‐Si thin‐film photodevices, p‐i‐n thin‐film photodiodes (TFPDs) and p‐n TFPDs, were evaluated. It was found that the photo‐induced current (Iphoto) is not simultaneously relatively high and independent of the applied voltage (Vapply). Next, a novel poly‐Si thin‐film photodevice, p‐i‐n thin‐film phototransistor (TFPT), is proposed. It is found that the Iphoto is simultaneously relatively high and independent of the Vapply because the depletion layer is formed in the entire intrinsic region and the electric field is always high. These characteristics are preferable for photosensor applications. Finally, the p‐i‐n TFPT was applied to an artificial retina. The photo‐illuminance profile is correctly detected and the output voltage profile is correspondingly outputted. This artificial retina is expected to be suitable for human beings because it can potentially be fabricated on a flexible, harmless, plastic, and organic substrate.

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Section: Methodsmentioning

confidence: 99%

“…This artificial retina is expected to be suitable for human beings because it can potentially be fabricated on flexible, harmless, plastic and organic substrate. [6][7][8]…”

Section: Introductionmentioning

confidence: 99%

Evaluation of thin‐film photodevices and application to an artificial retina

Kimura¹,

Shima²,

Yamashita³

et al. 2008

J Soc Info Display

Self Cite

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show abstract

“…While the authors of the previous papers [2]- [4] demonstrated relatively small flexible TFT LCDs (1-3 in) using the transfer technology, they did not mention the utilization of the technology to larger substrates. From the standpoint of mass production, high rates and satisfactory uniformity over large substrate areas are required for the glass etching.…”

Section: Introductionmentioning

confidence: 99%

Transfer Processes for Thermally Stable Large-Size TFT Flexible Substrates

Takechi

Eguchi

Kanoh

et al. 2007

IEEE Trans. Semicond. Manufact.

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We report on glass etching transfer processes to obtain thermally stable large-size TFT flexible substrates on plastic film bases. The transfer processes include high-pressure jet etching that allows us to achieve good etch-rate uniformity over the large area and the utilization of an adhesive having a low elastic modulus. From the experiments and simulations, we find that using an adhesive having a low elastic modulus is effective in reducing bend of the flexible substrate under thermal stresses. The simulations also predict that the reduction in the bend corresponds to the reduction in the principal stress of the adhesive, leading to the suppression of the film peeling off from the thinned glass. Using the transfer processes, we have successfully fabricated thermally stable TFT flexible substrates (300 mm 350 mm 200 m) that have satisfactory electrical characteristics.

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“…To obtain the TFT flexible substrates, transfer processes have been developed [1]- [3], in which low-temperature poly-Si (LTPS) TFT arrays were fabricated on a glass substrate using ordinary processing and then transferred onto a plastic substrate. One of these transfer processes included applying a protective film on the TFT array surface and etching the glass substrate away using hydrofluoric (HF) acid [1], [2].…”

Section: Introductionmentioning

confidence: 99%

“…Some adhesives have been used in the transfer processes [1]- [3], which could cause degradation of the TFT performances due to adhesive contamination. It is, therefore, necessary to develop a transfer process free of contamination, while attaining a high rate of glass etching.…”

Section: Introductionmentioning

confidence: 99%

High-Rate Glass Etching Process for Transferring Polycrystalline Silicon Thin-Film Transistors to Flexible Substrates

Takechi

Eguchi

Kanoh

et al. 2005

IEEE Trans. Semicond. Manufact.

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We report on a process technology that makes possible the transfer of polycrystalline silicon thin-film transistor (poly-Si TFT) arrays from an original rigid glass substrate to another flexible plastic substrate. The transfer technology is characterized by its high-rate glass etching process, using a newly developed apparatus. After a description of the transfer sequence free from adhesive contamination, we present experimental observations for highrate glass etching in hydrofluoric (HF) and hydrochloric (HCl) acid solution mixtures. The etching apparatus provides jets of the solution mixtures to the glass surface in order to achieve good circulation of the solutions in the bath, as well as to remove etch products effectively from the surface. We successfully achieved etch rates as high as 6 m/min with the etched surfaces almost as smooth as the original glass. In order to gain insight into the chemical mechanism of the etching, we developed a simplified kinetic etching model based on a Langmuir isotherm. The model and experimental etch-rate data are generally in good agreement, indicating that the basic modeling approach captures much of the essential chemistry for the high-rate glass etching. The transfer technology allows us to obtain TFT flexible substrates with good electrical characteristics and flexibility even after an annealing process at as high as 150 C. These results demonstrate that the transfer technology is a promising candidate for achieving entirely new lightweight electronic devices such as flexible displays and radio frequency identification tags based on TFT flexible substrates.Index Terms-Flexible substrate, glass etching, kinetic etching model, polycrystalline silicon thin-film transistor, transfer process.

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Low‐temperature poly‐Si TFT transferred onto plastic substrates by using surface free technology by laser ablation/annealing (SUFTLA®)

Cited by 25 publications

References 11 publications

Evaluation of thin‐film photodevices and application to an artificial retina

Evaluation of thin‐film photodevices and application to an artificial retina

Transfer Processes for Thermally Stable Large-Size TFT Flexible Substrates

High-Rate Glass Etching Process for Transferring Polycrystalline Silicon Thin-Film Transistors to Flexible Substrates

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