Low temperature process for strontium bismuth tantalate thin films

Celinska, Jolanta; Joshi, V. K.; Narayan, S. P. Atul; McMillan, L. D.; Araújo, Carlos A. Paz de

doi:10.1080/10584580008222247

Cited by 28 publications

(11 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Polycrystalline BIT thin films have a fatal disadvantage, however, that possessed reduced remnant polarization ( P r ) of approximately 10 C/cm 2 , which was considerably smaller than those of the Pb-based ferroelectrics. [1][2][3][4] Some researchers have suggested that ion substitution in BIT crystal may be an effective technique for improving the ferroelectric properties. Park et al 5 reported that the fatiguefree films with excellent ferroelectric properties are obtained by substitution of Bi-site ions in BIT film for La 3ϩ ions ͓(Bi,La) 4 Ti 3 O 12 ͑BLT͔͒ using a pulsed laser deposition.…”

mentioning

confidence: 99%

Approach for enhanced polarization of polycrystalline bismuth titanate films by Nd3+/V5+ cosubstitution

Uchida

Yoshikawa

Okada

et al. 2002

Applied Physics Letters

160

View full text Add to dashboard Cite

Thin films of Nd 3ϩ -substituted bismuth titanate, (Bi 4.00Ϫy ,Nd y )Ti 3.00 O 12 ͑BNT͒, Nd 3ϩ /V 5ϩ -cosubstituted bismuth titanate, (Bi 4.00Ϫy ,Nd y )(Ti 3.00Ϫx V x )O 12 ͑BNTV͒, and La 3ϩ -substituted bismuth titanate, (Bi 3.25 ,La 0.75 )Ti 3.00 O 12 ͑BLT͒ were fabricated on the (111)Pt/Ti/SiO 2 /(100)Si substrates by a chemical solution deposition technique. These films possessed random-oriented polycrystalline structure. The BNT film had larger remnant polarization ( P r ) than the BLT film; P r and coercive field (E c ) of the BNT film with yϭ0.50 were 32 C/cm 2 and 126 kV/cm, respectively. Furthermore, V 5ϩ substitution improved the P r value of the BNT film up to 37 C/cm 2 ͑BNTV film; yϭ0.50, xϭ0.02), while the BNTV film had an E c value of approximately 119 kV/cm which was similar to that of the BNT film. Ferroelectric properties of the Pb-free polycrystalline BNT and BNTV films are comparable with those of conventional Pb-based ferroelectric films like a lead zirconate titanate.

show abstract

mentioning

confidence: 99%

Approach for enhanced polarization of polycrystalline bismuth titanate films by Nd3+/V5+ cosubstitution

Uchida

Yoshikawa

Okada

et al. 2002

Applied Physics Letters

160

View full text Add to dashboard Cite

show abstract

“…This is an important aspect of materials control in the ultra-thin regime needed for high-density FeRAMs. A low temperature (≤650 °C) process was developed to produce high-performance SBT fi lms [ 63 ].…”

Section: Stacked Cell Processing Issuesmentioning

confidence: 99%

Review of the Science and Technology for Low- and High-Density Nonvolatile Ferroelectric Memories

Auciello

Araújo

Celinska

2014

Emerging Non-Volatile Memories

View full text Add to dashboard Cite

“…Therefore, for these systems it is quite necessary that the processing temperature be lowered below 800 • C, since at high temperatures, the reaction at the bottom electrode/thin film interface causes degradation of the electrical properties. Several optimized processes including the rapid thermal annealing (RTA) and annealing of SBT thin films in the oxygen flow, have been successful to lower the crystallization temperature approximately to 650 • C [11][12][13][14] and to improve the properties of SBT thin films as well. Sung et al used cation doping for Ta 5+ ions and nanoparticle seeding for SBT thin films, respectively and reported considerable enhancement of Aurivillius phase formation kinetics in both cases [7,15].…”

Section: Introductionmentioning

confidence: 99%

Strong thickness dependence of aurivillius phase formation in SrBi2Ta2O9 thin films

et al. 2006

View full text Add to dashboard Cite

Sr 0.7 Bi 2.4 Ta 2 O 9 (SBT) thin films were studied for the dependence of Aurivillius phase formation kinetics on their film thickness. SBT thin films were fabricated using a sol-gel process and spin coating, and their thickness was varied controlling the number of spin coating. The films were first heated at a low temperature for the complete crystallization of amorphous film to fluorite phase and then further heated at different elevated temperatures for the phase transformation to Aurivillius for 40 min. It was found that the phase transformation kinetics apparently increased with thickness up to ∼390 nm, and then it sharply decreased at higher values. The Aurivillius crystal size decreased and the density of crystals increased with the increase of film thickness up to ∼390 nm, implying increasing number of nuclei due to the reduced energy barrier for nucleation. Above the critical value both the size and density of crystals decreased. It is suggested that up to ∼390 nm the tensile strain energy in the films, which was stored by the shrinkage of thin films during the removal of remaining organic components from sol-gel chemistry, plays a major role for determining Y.-M. Sung ( ) the phase transformation kinetics and above the critical value SBT films act as a free bulk material without substrate constraints.

show abstract

Low temperature process for strontium bismuth tantalate thin films

Cited by 28 publications

References 0 publications

Approach for enhanced polarization of polycrystalline bismuth titanate films by Nd3+/V5+ cosubstitution

Approach for enhanced polarization of polycrystalline bismuth titanate films by Nd3+/V5+ cosubstitution

Review of the Science and Technology for Low- and High-Density Nonvolatile Ferroelectric Memories

Strong thickness dependence of aurivillius phase formation in SrBi2Ta2O9 thin films

Contact Info

Product

Resources

About