Low-Temperature-Processed Zinc Oxide Thin-Film Transistors Fabricated by Plasma-Assisted Atomic Layer Deposition

Kawamura, Yumi; Tani, Mai; Hattori, Nozomu; Miyatake, Naomasa; Horita, Masahiro; Ishikawa, Yasuaki; Uraoka, Yukiharu

doi:10.7567/jjap.51.02bf04

Cited by 8 publications

(3 citation statements)

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“…3 d ). 27,86–103 Key operating parameters, including turn-on voltage, carrier mobility, on/off current ratio and stability are important for optimisation, 104 and transparency can be necessary for lighting applications which has led to transparent TFTs being produced entirely by ALD and print patterning. 105 These and other devices, such as diodes, 106,107 photoelectrodes 108–110 and inorganic LEDs, 23,111 will be included in the discussion.…”

Section: Ald Process and Device Overviewmentioning

confidence: 99%

“…ALD is a good technique for passivation and encapsulation layers due to the high quality, pin-hole free coating, 19 and is an easy step to add for devices which already have ALD ZnO layers, but choice of the passivation layer can affect the ZnO underneath. For example Al 2 O 3 is a common layer in TFTs but has been seen to affect the performance 94 e.g. by increasing carrier concentration (attributed to the trimethyl aluminium).…”

Section: Multilayersmentioning

confidence: 99%

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Review of tailoring ZnO for optoelectronics through atomic layer deposition experimental variables

Burgess

2017

Materials Science and Technology

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Atomic layer deposition (ALD) is an increasingly popular thin film deposition technique which offers unique large area capability combined with excellent conformality, thus ALD will likely be important in the development of next generation optoelectronic devices. Such device platforms include solar cells, thin film transistors and light emitting diodes, and in all of these technologies one material is frequently used – zinc oxide (ZnO) – owing to its excellent electrical and optical properties combined with earth abundance. The approaches and achievements in tailoring the properties of ALD ZnO are discussed. Key process variables include deposition temperature and purge times as well dopant incorporation, with particular attention paid to tuning band alignment and carrier concentrations (focusing on lower carrier concentration applications). This review was submitted as part of the 2016 Materials Literature Review Prize of the Institute of Materials, Minerals and Mining run by the Editorial Board of MST. Sponsorship of the prize by TWI Ltd is gratefully acknowledged.

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Section: Ald Process and Device Overviewmentioning

confidence: 99%

Section: Multilayersmentioning

confidence: 99%

Review of tailoring ZnO for optoelectronics through atomic layer deposition experimental variables

Burgess

2017

Materials Science and Technology

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“…[1][2][3] Most AOS films are deposited by physical vapor deposition (PVD), which requires a high-vacuum system. PVD, such as by rf-dc magnetron sputtering, chemical vapor deposition, pulsed laser deposition, and atomic layer deposition, [4][5][6][7] has the drawbacks of high equipment costs, difficulty in reproducing a target, and large vacuum facilities. 8) If a solution process becomes feasible, there will be many benefits, such as high throughput, low cost, fast processing time, and direct patterning.…”

Section: Introductionmentioning

confidence: 99%

Effects of combined Ar/O₂ plasma and microwave irradiation on electrical performance and stability in solution-deposited amorphous InGaZnO thin-film transistors

Hwang

Kim

Cho

2014

Jpn. J. Appl. Phys.

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We performed high spectral resolution observations of Mercury's exosphere on 2005 October 30 and 31 using the European Southern Observatory-New Technology Telescope, La Silla, Chile. The large spectral range, 385-855 nm, of the spectrograph, ESO Multi-Mode Instrument, provides a unique opportunity to search for nonidentified species in Hermian's environment. In this paper, we report a tentative detection of atomic aluminum in the exosphere of Mercury. This detection should be confirmed by further observations and can be used as an upper limit for this element in Mercury's exosphere. We also estimate the upper limit for the column densities of Fe and Si exospheric atoms. Detection of Al, a refractory element, if confirmed, as well as its high exospheric abundance (between 2 and 18) with respect to Ca would suggest either an unexpected surface composition or a relation between exosphere and surface composition that is not well understood.

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From Precursor Chemistry to Gas Sensors: Plasma‐Enhanced Atomic Layer Deposition Process Engineering for Zinc Oxide Layers from a Nonpyrophoric Zinc Precursor for Gas Barrier and Sensor Applications

Mai

Mitschker

Bock

et al. 2020

Small

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Low-Temperature-Processed Zinc Oxide Thin-Film Transistors Fabricated by Plasma-Assisted Atomic Layer Deposition

Cited by 8 publications

References 20 publications

Review of tailoring ZnO for optoelectronics through atomic layer deposition experimental variables

Review of tailoring ZnO for optoelectronics through atomic layer deposition experimental variables

Effects of combined Ar/O₂ plasma and microwave irradiation on electrical performance and stability in solution-deposited amorphous InGaZnO thin-film transistors

From Precursor Chemistry to Gas Sensors: Plasma‐Enhanced Atomic Layer Deposition Process Engineering for Zinc Oxide Layers from a Nonpyrophoric Zinc Precursor for Gas Barrier and Sensor Applications

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Low-Temperature-Processed Zinc Oxide Thin-Film Transistors Fabricated by Plasma-Assisted Atomic Layer Deposition

Cited by 8 publications

References 20 publications

Review of tailoring ZnO for optoelectronics through atomic layer deposition experimental variables

Review of tailoring ZnO for optoelectronics through atomic layer deposition experimental variables

Effects of combined Ar/O2 plasma and microwave irradiation on electrical performance and stability in solution-deposited amorphous InGaZnO thin-film transistors

From Precursor Chemistry to Gas Sensors: Plasma‐Enhanced Atomic Layer Deposition Process Engineering for Zinc Oxide Layers from a Nonpyrophoric Zinc Precursor for Gas Barrier and Sensor Applications

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Effects of combined Ar/O₂ plasma and microwave irradiation on electrical performance and stability in solution-deposited amorphous InGaZnO thin-film transistors