Low temperature resistance of p-InSb(Mn)

Obukhov, S. A.; Neganov, B.S.; Kiselev, Yu.F.; Chemikov, A.N.; Vekshina, V. S.; Pepik, N. I.; Popkov, Alexander

doi:10.1016/0011-2275(91)90020-w

Cited by 14 publications

(6 citation statements)

References 7 publications

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“…Attribution of the ρ(T) maximum to critical scattering is further corroborated by the observation of negative magnetoresistance, which occurs because the critical scattering decreases when an external magnetic field aligns the magnetic moments. This effect has in fact been observed for all of the III-Mn-V ferromagnetic semiconductors studied so far [1], and also for non-ferromagnetic bulk InSb doped with Mn [8,18]. The top panel of Fig.…”

Section: Resultssupporting

confidence: 53%

“…Non-ferromagnetic Mn-doped InSb was grown previously in bulk as a possible ultra-lowtemperature thermoresistor material [8], and by molecular beam epitaxy (MBE) for magnetic field sensing [9]. The most closely-related prior ferromagnetism study used metal organic MBE to produce the InMnAs-rich quaternary In 1-x Mn x As 0.8 Sb 0.2 , whose magnetization displayed interesting light-induced changes [10].…”

Section: Introductionmentioning

confidence: 99%

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Growth and properties of ferromagnetic In1−Mn Sb alloys

Wójtowicz

Lim

Liu

et al. 2004

Physica E: Low-dimensional Systems and Nanostructures

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Section: Resultssupporting

confidence: 53%

Section: Introductionmentioning

confidence: 99%

Growth and properties of ferromagnetic In1−Mn Sb alloys

Wójtowicz

Lim

Liu

et al. 2004

Physica E: Low-dimensional Systems and Nanostructures

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“…Our X-STM measurements clearly show a triangular contrast for the Mn dopants corresponding with a shallow acceptor state. This agrees with the study of Obukhov et al, 20 where it is shown that Mn in InSb acts as a shallow acceptor with a binding energy of about 9 meV. 21,22 If we image the cleaved surface at negative voltages (filled state imaging) we observe circular symmetric contrast.…”

supporting

confidence: 91%

Mn doped InSb studied at the atomic scale by cross-sectional scanning tunneling microscopy

Mauger

Bocquel

Koenraad

et al. 2015

Applied Physics Letters

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We present an atomically resolved study of metal-organic vapor epitaxy grown Mn doped InSb that is ferromagnetic at room-temperature. Both topographic and spectroscopic measurements have been performed by cross-sectional scanning tunneling microscopy. The measurements show a perfect crystal structure without any precipitates and reveal that Mn acts as a shallow acceptor. The Mn concentration obtained from the cross-sectional STM data compares well with the intended doping concentration. No second phase material or (nano)clustering of the Mn was observed. While the pair correlation function of the Mn atoms showed that their local distribution is uncorrelated beyond the STM resolution for observing individual dopants, disorder in the Mn ion location is clearly noted. We discuss the implications of the observed disorder for a number of suggested explanations of the room-temperature ferromagnetism in Mn doped InSb grown by metal-organic vapor epitaxy.

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“…Our previous studies on p-InSb(Mn) crystals revealed [4][5][6] Colossal Negative Magnetoresistance and Hall constant sign inversion within N cr in a magnetic field -similar effects as observed in magnetic compounds [7][8][9][10]. The aim of this work is to study the influence of the manganese impurity concentration on transport and magnetotransport effects of p-InSb(Mn) crystals within N cr , to compare and discuss similar effects in SCES.…”

mentioning

confidence: 80%

Transport and magnetotransport effects in indium antimonide doped with manganese within quasimetal‐insulator transition

Obukhov

2012

Phys. Status Solidi C

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InSb crystals doped with manganese within the critical concentration of metal‐insulator transition (Ncr = 2×1017 cm‐3) demonstrate colossal negative magnetoresitance and Hall constant sign inversion at low temperatures in magnetic field – unusual for nonmagnetic materials. Studies of the magnetotransport and conductivity dependency on temperature and manganese concentration revealed that both holes and electrons influence the effects. An excitonic insulator phase conception is proposed as a new approach for the explanation of conductivity and magnetotransport anomalies in p‐InSb(Mn). (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Low temperature resistance of p-InSb(Mn)

Cited by 14 publications

References 7 publications

Growth and properties of ferromagnetic In1−Mn Sb alloys

Growth and properties of ferromagnetic In1−Mn Sb alloys

Mn doped InSb studied at the atomic scale by cross-sectional scanning tunneling microscopy

Transport and magnetotransport effects in indium antimonide doped with manganese within quasimetal‐insulator transition

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