Low-temperature resistivity of Bi and its alloys

Chopra, Vibha; Ray, R. K.; Bhagat, S. M.

doi:10.1002/pssa.2210040121

Cited by 28 publications

(4 citation statements)

References 17 publications

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“…This gives a KWR of Ωmkg −4 m −9 s 6 K 2 , which is comparable to that calculated for correlated electron systems 29 . In fact, signatures for electron–electron interaction have previously been found in many semimetals such as in Sb 30 , Bi 31 , WP 2 22 , and PdCoO 2 21 at low temperatures. The KWR of MoP highlights once more the importance of the electron–electron interaction in semimetals at low temperatures.…”

Section: Resultsmentioning

confidence: 89%

Extremely high conductivity observed in the triple point topological metal MoP

et al. 2019

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Weyl and Dirac fermions have created much attention in condensed matter physics and materials science. Recently, several additional distinct types of fermions have been predicted. Here, we report ultra-high electrical conductivity in MoP at low temperature, which has recently been established as a triple point fermion material. We show that the electrical resistivity is 6 nΩ cm at 2 K with a large mean free path of 11 microns. de Haas-van Alphen oscillations reveal spin splitting of the Fermi surfaces. In contrast to noble metals with similar conductivity and number of carriers, the magnetoresistance in MoP does not saturate up to 9 T at 2 K. Interestingly, the momentum relaxing time of the electrons is found to be more than 15 times larger than the quantum coherence time. This difference between the scattering scales shows that momentum conserving scattering dominates in MoP at low temperatures.

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Section: Resultsmentioning

confidence: 89%

Extremely high conductivity observed in the triple point topological metal MoP

et al. 2019

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“…Our calculation already gives some clues as to when this might happen: for example, when the self-energy is strongly momentum dependent or when there are significant vertex corrections to the conductivity. Another outstanding challenge is to understand the KWR in compensated semimetals [21][22][23] .…”

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confidence: 99%

A unified explanation of the Kadowaki–Woods ratio in strongly correlated metals

2009

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Discoveries of ratios whose values are constant within broad classes of materials have led to many deep physical insights. The Kadowaki-Woods ratio (KWR) 1,2 compares the temperature dependence of a metals resistivity to that of its heat capacity; thereby probing the relationship between the electronelectron scattering rate and the renormalisation of the electron mass. However, the KWR takes very different values in different materials 3,4 . Here we introduce a ratio, closely related to the KWR, that includes the effects of carrier density and spatial dimensionality and takes the same (predicted) value in organic charge transfer salts, transition metal oxides, heavy fermions and transition metalsdespite the numerator and denominator varying by ten orders of magnitude.Hence, in these materials, the same emergent physics is responsible for the mass enhancement and the quadratic temperature dependence of the resistivity and no exotic explanations of their KWRs are required.In a Fermi liquid the temperature dependence of the electronic contribution to the heat capacity is linear, i.e., C el (T ) = γT . Another prediction of Fermi liquid theory 5 is that, at low temperatures, the resistivity varies as ρ(T ) = ρ 0 + AT 2 . This is observed experimentally when electron-electron scattering, which gives rise to the quadratic term, dominates over electron-phonon scattering.Rice observed 1 that in the transition metals A/γ 2 ≈ a T M = 0.4 µΩ cm mol 2 K 2 /J 2 (Fig. 1), even though γ 2 varies by an order of magnitude across the materials he studied. Later, Kadowaki and Woods 2 found that in many heavy fermion compounds A/γ 2 ≈ a HF = 10 µΩ cm mol 2 K 2 /J 2 (Fig. 1), despite the large mass renormalisation which causes γ 2 to vary by more than two orders of magnitude in these materials. Because of this remarkable

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“…I n several papers [25 to 271, the temperature dependence of the electrical resistance of pure bismuth is explained by an electron-phonon scattering mechanism, whereas other authors propose a carrier-carrier scattering mechanism for the T2-dependence at T < 16 K. The weak dependence of the T2-ternis on the charge carrier concentration (e.g. when Bi is doped with Pb and Te) makes carrier-carrier scattering improbable [14]. Moreover, if the electron-hole scattering were the dominant scattering mechanism at low temperatures, it should be expected that the T2-dependence is preserved also towards lower temperatures ( T < 2 K).…”

Section: Discussionmentioning

confidence: 99%

Size Effect and Temperature Dependence of the Electrical Resistance in Bismuth Single Crystals of High Perfection

Kraak

Kühl

Thom

et al. 1981

Physica Status Solidi (b)

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Bi single crystals of high perfection (having extremely high resistance ratios r4.2 = e290 K/@4.2 9) are grown by the mould growing method. I n these crystals, the thickness dependence of the resistance ratio ~4 . 2 and the temperature dependence of the electrical resistance are investigated in a temperature range between 2 and 77 K. I n the range of the diffusion size effect, a markedly different behaviour is found to occur in the thickness dependence of the two crystal orientations investigated (j I( C,; j (1 CJ. An anisotropy of the slope of the Ta-terms is detected in the temperature dependences of the electrical resistance in the temperature interval from 2 to 16 K. Nach dem Formzuchtungsverfahren werden Bi-Einkristalle hoher Perfektion (mit extrem hohen

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Low-temperature resistivity of Bi and its alloys

Cited by 28 publications

References 17 publications

Extremely high conductivity observed in the triple point topological metal MoP

Extremely high conductivity observed in the triple point topological metal MoP

A unified explanation of the Kadowaki–Woods ratio in strongly correlated metals

Size Effect and Temperature Dependence of the Electrical Resistance in Bismuth Single Crystals of High Perfection

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