Low temperature silicon direct bonding for application in micromechanics: bonding energies for different combinations of oxides

Kräuter, Gertrud; Schumacher, Andreas; Gösele, U.

doi:10.1016/s0924-4247(98)00102-2

Cited by 62 publications

(38 citation statements)

References 10 publications

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“…By the way, it is worth to note that, for these wafers, there is no significant difference in terms of surface energy between Si/SiO 2 and SiO 2 /SiO 2 wafer bonding. This contrasts with the results obtained in (Kra¨uter et al 1998), where Si/SiO 2 bonded wafers presented higher surface energy than SiO 2 /SiO 2 wafer bonding. The low diffusion of interfacial water through oxide short annealing can certainly explain different experimental results.…”

Section: Surface Roughnesscontrasting

confidence: 99%

“…The low diffusion of interfacial water through oxide short annealing can certainly explain different experimental results. Actually, relatively (6 h at 300-500°C) was considered in (Kra¨uter et al 1998), whereas in our experiments, the annealing time was 70 h, letting us suppose that diffusion had completed before the end of the annealing step.…”

Section: Surface Roughnessmentioning

confidence: 99%

“…In wafer bonding of sandwich-like structures, Si/SiO 2 or SiO 2 / SiO 2 bonding configuration are often two possible options during device manufacturing; but it can also happen that the choice of bonding interfaces or even their dimensions (thickness) would be imposed by the final physical structure of devices or MEMS. So far, in the literature dealing with Si/SiO 2 and SiO 2 /SiO 2 wafer bonding it was commonly accepted that Si/SiO 2 bonding strength was higher than SiO 2 /SiO 2 (Tong et al 1994;Kra¨uter et al 1998;Suni et al 2002). Therefore, it resulted as a common option to use Si/SiO 2 as bonding interface.…”

Section: Introductionmentioning

confidence: 99%

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Effect of interfacial SiO2 thickness for low temperature O2 plasma activated wafer bonding

et al. 2005

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It was experimentally demonstrated that bonding strength strongly depends on the total SiO 2 thickness near the bonding interface for a given O 2 plasma surface activation. Systematic experiments of Si/ SiO 2 and SiO 2 /SiO 2 wafer bonding are performed for analyzing the evolution of the bonding surface energy with the interfacial oxide thickness. Optimum plasma exposure time increases with the interfacial SiO 2 thickness to achieve the maximum bonding strength in SiO 2 / SiO 2 or SiO 2 /Si. An optimal process option for plasma activated SiO 2 /SiO 2 wafer bonding is proposed.

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Section: Surface Roughnesscontrasting

confidence: 99%

Section: Surface Roughnessmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Effect of interfacial SiO2 thickness for low temperature O2 plasma activated wafer bonding

et al. 2005

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“…The slow diffusion of water through the thick thermal oxide layer hampers the formation of covalent bonds. 9 In addition, the thermal oxide surface is rougher than the native oxide one. At temperatures up to 600-800°C, the saturated surface energy of the SiO 2 /SiO 2 bonding interface is only about 400 mJ/m 2 , which was measured by using crackopening method.…”

Section: Discussionmentioning

confidence: 99%

Modeling the dynamics of Si wafer bonding during annealing

Han

Wang

2000

Journal of Applied Physics

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The bonding behavior of silicon wafers depends on activation energy for the formation of siloxane bonds. In this article we developed a quantitative model on the dynamics of silicon wafer bonding during annealing. Based on this model, a significant difference in the bonding behaviors is compared quantitatively between the native oxide bonding interface and the thermal oxide bonding interface. The results indicate that the bonding strength of the native oxide interface increases with temperature much more rapidly than that of the thermal oxide interface.

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“…So improvement of the bond strength may show a substantial improvement as well. From literature it is known that interesting bond strength improvements can be achieved by using a plasma activation step (Plo¨ßl and Kra¨uter 1999;Kissinger and Kissinger 1991;Kra¨uter et al 1998). Although most reported experiments took place with silicon and silicon oxide surfaces, these new developments might also be very valuable for improving the glass chip strength.…”

Section: Discussionmentioning

confidence: 99%

Fabrication and mechanical testing of glass chips for high-pressure synthetic or analytical chemistry

et al. 2005

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The pressure strength of microfluidics glass chips for high-pressure chemistry has been examined. Internal pressures up to 320 bar have been measured, although variations are substantial. Long annealing steps at high temperatures did not show any improvement, but smoothening the powder blasted channel walls by isotropic etching did. Although macro cracks are observed at the bond interface it is believed that the formation of micro cracks in the channel wall and stress concentrations due to sharp corners in the channel crosssection geometry strongly limits the maximum applicable pressures.

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Low temperature silicon direct bonding for application in micromechanics: bonding energies for different combinations of oxides

Cited by 62 publications

References 10 publications

Effect of interfacial SiO2 thickness for low temperature O2 plasma activated wafer bonding

Effect of interfacial SiO2 thickness for low temperature O2 plasma activated wafer bonding

Modeling the dynamics of Si wafer bonding during annealing

Fabrication and mechanical testing of glass chips for high-pressure synthetic or analytical chemistry

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