2014
DOI: 10.1016/j.ceramint.2014.06.053
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Low-temperature sintering and microwave dielectric properties of (Zn1−xCox)2SiO4 ceramics

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Cited by 95 publications
(27 citation statements)
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“…Since this is much higher than the melting point of silver (961°C), it is necessary to decrease the sintering temperature of LiZnTi ferrites to ∼950°C in order to cofire with silver electrodes and apply in LTCC phase shifters. To meet the demand of sinterability in LTCC technology, several approaches have been proposed so far, and it is believed that adding low-melting oxides or glass flux is an effective and feasible way [8,[13][14][15][16][17][18][19].…”
Section: Introductionmentioning
confidence: 99%
“…Since this is much higher than the melting point of silver (961°C), it is necessary to decrease the sintering temperature of LiZnTi ferrites to ∼950°C in order to cofire with silver electrodes and apply in LTCC phase shifters. To meet the demand of sinterability in LTCC technology, several approaches have been proposed so far, and it is believed that adding low-melting oxides or glass flux is an effective and feasible way [8,[13][14][15][16][17][18][19].…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, control of the microstructural characteristics of Zn 2 SiO 4 ceramics should be investigated in order to obtain Zn 2 SiO 4 ceramics with a high Qf value. The microstructural characteristics could be controlled by the addition of a dopant, the substitution of ions, and the sintering process [9,10]. In this study, control of the sintering process was employed in order to limit the formation of a secondary phase of Zn 2 SiO 4 , which could occur using the other methods.…”
Section: Introductionmentioning
confidence: 99%
“…However, higher sintering temperature restricted the further application of these ceramics in low temperature co-firing ceramics devices [11]. Therefore, more and more studies are focused on researching new material systems with a low-firing temperature and good microwave dielectric properties ( low ε r , high Q and near-zero τ f ), such as AMP 2 O 7 (A= Ca, Sr; M= Zn, Cu) [12], (Li 0.5 M 0.5 )WO 4 (M= Nd, Sm) [13,14], (K 0.5 Ln 0.5 )MoO 4 (Ln= Nd and Sm) [15], BaLn 2 (MoO 4 ) 4 (Ln= Nd and Sm) [16], Li 2 M 2+ 2 Mo 3 O 12 [17], Li 3 M 3+ Mo 3 O 12 [17].…”
Section: Introductionmentioning
confidence: 99%
“…ConclusionsNaMg 4 V 3 O 12 ceramic has been prepared by the solid state reaction method. The ceramic can be well densified at ~830 o C for 4 h in air and exhibits microwave11 dielectric properties with ε r of 9.53, Q×f of 32,820 GHz (at ~11GHz) and τ f of -90 ppm/ o C. NaMg 4 V 3 O 12 ceramic shows obvious peak variations due to the evaporation of Na + . The average grain size of the microstructure was closely associated with the variation of Q×f values.…”
mentioning
confidence: 99%