We applied Vopsaroiu's model to (Bi,Pr)(Fe,Mn)O3 (BPFM) and Pb(Zr,Ti)O3 (PZT) ferroelectric thin films fabricated by chemical solution deposition. Temperature dependences of the saturation polarization and the coercive filed were measured in low temperature region from 100 to 200 K. The saturation polarizations of BPFM thin films were decreased with decreasing the measurement temperature due to polarization pinning effect while that of PZT thin film was almost unchanged over the temperature region. The coercive fields of all the thin films were increased linearly with decreasing the measurement temperature. The activation energies for polarization reversal in as-grown BPFM, post-annealed BPFM and PZT thin films were 1.18, 1.25, 0.95 eV, respectively. These results indicate that BPFM thin films have large activation energies for polarization reversal compared with PZT thin film. In addition, the post-annealed BPFM thin film has a larger activation energy than the as-grown BPFM thin film.