Low temperature synthesis and characterization of PbTe-based materials

Papageorgiou, Ch.; Giapintzakis, J.; Kyratsi, Theodora

doi:10.1063/1.4731515

Cited by 2 publications

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“…A longer duration of annealing at 800 °C led to a decrease in the Seebeck coefficient values. The thermoelectric properties of Cr−N films can be compared to the power factor of other thermoelectric thin-film materials at room temperature, like ntype Bi 2 T 3 (4000 μW m −1 K −2 ), 42 n-type PbTe (1500 μW m −1 K −2 ), 43 and p-type Ca 3 Co 4 O 9 (800 μW m −1 K −2 ). 44 Figure 4 displays the SEM images of selected samples.…”

Section: ■ Resultsmentioning

confidence: 99%

Influence of Ammonia Annealing on Cr–N Thin Films and Their Thermoelectric Properties

Hjort,

Tessier,

Giovannelli

et al. 2024

ACS Appl. Energy Mater.

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CrN-based thin films are emerging as thermoelectric materials for energy harvesting. Their thermoelectric properties depend on phase composition and stoichiometry, necessitating control over the nitrogen content and how it affects the phase composition.Here, the effect of high-temperature ammonia annealing on the thermoelectric properties as well as crystal structure of thin films of Cr−N on c-plane sapphire (Al 2 O 3 (0001)) was investigated. Single-phase (cubic CrN) and mix-phase (cubic CrN + hexagonal-Cr 2 N) Cr−N films were annealed in ammonia, converting any secondary phase of hexagonal Cr 2 N to cubic CrN. The thermoelectric properties of the films that contained a secondary phase of hexagonal Cr 2 N greatly improved upon annealing, with an increase of 900% to 0.5 × 10 −3 W m −1 K −2 for the film annealed at 800 °C for 2 h. Annealing of single-phase films of cubic CrN resulted in films with near-insulating electrical properties. For the thermoelectric applications of CrN, ammonia annealing can be beneficial over meticulous deposition control.

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Section: ■ Resultsmentioning

confidence: 99%

Influence of Ammonia Annealing on Cr–N Thin Films and Their Thermoelectric Properties

Hjort,

Tessier,

Giovannelli

et al. 2024

ACS Appl. Energy Mater.

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“…As was previously reported [5,6], the optimal free carrier concentration should be in the range of 10 19 −10 21 cm −3 and this is realized through appropriate doping. Information about various dopants effect on electrical properties of PbTe can be found elsewhere [7][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Impact of Different Conditions of Technological Process on Thermoelectric Properties of Fine-Grained PbTe

et al. 2016

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The aim of this work was to obtain PbTe material in the desired way in order to control the combined impact of lattice disorder, nanoscale precipitates and reduced grain sizes on the thermoelectric properties of this material. To achieve this, PbTe ingot doped with Ag was obtained by the Bridgman method, followed by ball-milling, cold pressing and sintering. In order to estimate crystallites diameters grain size measurements were carried out using the optical microscopy. Studies of electrical and thermoelectric properties of fine-grained material were performed. In order to analyze the morphology and the composition scanning electron microscopy and energy-dispersive X-ray spectroscopy were performed. Energy-dispersive X-ray spectroscopy analysis also revealed presence of Ag-Te precipitates.

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Low temperature synthesis and characterization of PbTe-based materials

Cited by 2 publications

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Influence of Ammonia Annealing on Cr–N Thin Films and Their Thermoelectric Properties

Influence of Ammonia Annealing on Cr–N Thin Films and Their Thermoelectric Properties

Impact of Different Conditions of Technological Process on Thermoelectric Properties of Fine-Grained PbTe

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