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Scanning tunneling spectroscopy images of Bi 2 Se 3 doped with excess Bi reveal electronic defect states with a striking shape resembling clover leaves. With a simple tight-binding model, we show that the geometry of the defect states in Bi 2 Se 3 can be directly related to the position of the originating impurities. Only the Bi defects at the Se sites five atomic layers below the surface are experimentally observed. We show that this effect can be explained by the interplay of defect and surface electronic structure.

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The new materials CsPbBi(3)Te(6) and CsPb(2)Bi(3)Te(7) were discovered through reactions of CsBi(4)Te(6) with PbTe, whereas the isostructural materials CsSnBi(3)Te(6) and CsSn(2)Bi(3)Te(7) were discovered through corresponding reactions with SnTe. The compounds can also be prepared from stoichiometric mixtures of Cs(2)Te, Pb (Sn), Bi, and Te. The crystal structures show a layered architecture of NaCl-type slabs alternating with layers of Cs atoms. This group of compounds offers a new quaternary system, Cs-M-Bi-Te (M = Pb and Sn), available for thermoelectric investigations, including fine-tuning of compositions and doping.

Thermoelectric generators (TEGs) make use of the Seebeck effect in semiconductors for the direct conversion of heat to electrical energy. The possible use of a device consisting of numerous TEG modules for waste heat recovery from an internal combustion (IC) engine could considerably help worldwide efforts towards energy saving. However, commercially available TEGs operate at temperatures much lower than the actual operating temperature range in the exhaust pipe of an automobile, which could cause structural failure of the thermoelectric elements. Furthermore, continuous thermal cycling could lead to reduced efficiency and lifetime of the TEG. In this work we investigate the long-term performance and stability of a commercially available TEG under temperature and power cycling. The module was subjected to sequential hotside heating (at 200°C) and cooling for long times (3000 h) in order to measure changes in the TEG's performance. A reduction in Seebeck coefficient and an increase in resistivity were observed. Alternating-current (AC) impedance measurements and scanning electron microscope (SEM) observations were performed on the module, and results are presented and discussed.