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Urazhdin, Sergei; Bilc, Daniel; Mahanti, S. D.; Tessmer, S. H.; Kyratsi, Theodora; Kanatzidis, Mercouri G.

doi:10.1103/physrevb.69.085313

Cited by 126 publications

(116 citation statements)

References 19 publications

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“…The 1 × 1 RHEED pattern and the high resolution STM image with a well-defined 1 × 1 symmetry (insert of Fig. 1(b)) suggest that the growth surface is the Te-terminated Sb 2 Te 3 (111)-(1 × 1) surface [20][21][22]. This surface is similar to that obtained by cleaving a bulk crystal [12][13][14][15][16][17].…”

Section: Resultssupporting

confidence: 58%

“…The interaction between two adjacent QLs is of the van der Waals type [9]. A cleaved surface of a bulk crystal is usually Te-terminated with an unreconstructed (1 × 1)-Te structure [20][21][22]. Similar to the well-known layer-by-layer growth of GaAs with an As4 molecular beam [38], ideal MBE growth of a Sb 2 Te 3 film in units of a QL along the [111] direction should be possible with a Te 2 molecular beam under Te-rich conditions.…”

Section: Methodsmentioning

confidence: 99%

“…These gapless surface states, protected by time-reversal symmetry, are very robust. So far, topological surface states have been observed in Bi 1-x Sb x , Bi 2 Se 3 , and Bi 2 Te 3 [10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26].…”

Section: Introductionmentioning

confidence: 99%

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Atomically smooth ultrathin films of topological insulator Sb2Te3

et al. 2010

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The growth and characterization of single-crystalline thin films of topological insulators (TIs) is an important step towards their possible applications. Using in situ scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES), we show that moderately thick Sb 2 Te 3 films grown layer-by-layer by molecular beam epitaxy (MBE) on Si(111) are atomically smooth, single-crystalline, and intrinsically insulating. Furthermore, these films were found to exhibit a robust TI electronic structure with their Fermi energy lying within the energy gap of the bulk that intersects only the Dirac cone of the surface states. Depositing Cs in situ moves the Fermi energy of the Sb 2 Te 3 films without changing the electronic band structure, as predicted by theory. We found that the TI behavior is preserved in Sb 2 Te 3 films down to five quintuple layers (QLs).

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Section: Resultssupporting

confidence: 58%

Section: Methodsmentioning

confidence: 99%

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Atomically smooth ultrathin films of topological insulator Sb2Te3

et al. 2010

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“…Triangular defects with half height QL step edges induced by scotch tape cleaving were also shown in Ref. [37].…”

Section: Discussionmentioning

confidence: 99%

Termination of single-crystal Bi2Se3 surfaces prepared by various methods

2016

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Bismuth Selenide (Bi 2 Se 3 ) is a topological insulator with a two-dimensional layered structure that enables clean and well-ordered surfaces to be prepared by cleaving. Although some studies have demonstrated that the cleaved surface is terminated with Se, as expected from the bulk crystal structure, other reports have indicated either a Bi-or mixed-termination. Low energy ion scattering (LEIS), low energy electron diffraction (LEED) and x-ray photoelectron spectroscopy (XPS) are used here to compare surfaces prepared by ex situ cleaving, in situ cleaving, and ion bombardment and annealing (IBA) in ultra-high vacuum (UHV). Surfaces prepared by in situ cleaving and IBA are well ordered and Se-terminated. Ex situ cleaved samples could be either Se-terminated or Bi-rich, are less well ordered and have adsorbed contaminants. This suggests that a chemical reaction involving atmospheric contaminants, which may preferentially adsorb at surface defects, could contribute to the non-reproducibility of the termination. ____________

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“…[3][4][5] Recently, with the research development of topological insulators(TIs), [6][7][8][9] it attracts the geeat attention again. TI is a new state having an energy gap in its bulk band structure and metallic helical states on its surface, which distinct from simple a metal or an insulator.…”

Section: Introductionmentioning

confidence: 99%