Low temperature through-Si via fabrication using electroless deposition

Inoue, Fumihiro; Philipsen, Harold; Radisic, Aleksandar; Armini, Silvia; Leunissen, Peter; Miyake, Hiroshi; Arima, Ryohei; Shimizu, Tomohiro; Ito, Toshiaki; Seki, Hirofumi; Shinozaki, Yuko; Yamamoto, Tomohiko; Shingubara, Shoso

doi:10.1109/3dic.2012.6262984

Cited by 4 publications

(3 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Therefore, we studied the deposition of diffusion barrier films by ELP and applying it for a high aspect ratio TSV. We proposed the all-wet Cu filling process of TSV using ELP of both barrier and seed layers [5]. We used Pd nanoparticles (Pd-NPs) as a catalyst prior to ELP of barrier layer [6,7].…”

Section: Introductionmentioning

confidence: 99%

Control of Adhesion Strength and TSV Filling Morphology of Electroless Barrier Layer

et al. 2013

View full text Add to dashboard Cite

In this study, we investigated to control adhesion property of the electroless plated barrier layer on SiO2 by addition of saccharin and its deposition profile in a high aspect ratio TSV with inhibitor and saccharin. We achieved high adhesion strength of barrier layer by addition of suitable amount saccharin. Furthermore, we succeeded in the formation of thin continuous electroless barrier layer for a high aspect ratio TSV with addition of both inhibitor and saccharin. The proposed highly adhesive and conformal electroless barrier layer formation would provide a highly reliable all-wet TSV filling process.

show abstract

Section: Introductionmentioning

confidence: 99%

Control of Adhesion Strength and TSV Filling Morphology of Electroless Barrier Layer

et al. 2013

View full text Add to dashboard Cite

show abstract

“…Cu filling process of TSV (through silicon via) is one of key issues for fabrication of TSVs. We reported the allwet filling process using electroless plating of both barrier and seed layers, and succeeded in the filling of high aspect ratio TSV with Cu [1,2]. However, there was a problem of poor adhesion with an increase in the barrier layer thickness.…”

mentioning

confidence: 99%

Improvement of Adhesion Strength of Electrolessbarrier Layer and Its Application to TSV Process

Nishizawa,

Shingubara,

Shimizu

et al. 2013

Meet. Abstr.

View full text Add to dashboard Cite

show abstract

“…For realizing a high aspect ratio Cu-filled TSV, it is essentially important to form the barrier and seed layers by electroless plating which enables highly conformal deposition profile at low temperature. We reported the all-wet Cu filling process using electroless plating of both barrier and seed layers [2,3].…”

mentioning

confidence: 99%

Control of Adhesion Strength and TSV Filling Morphology of Electroless Barrier Layer

Arima,

Inoue,

Miyake

et al. 2012

Meet. Abstr.

View full text Add to dashboard Cite

show abstract

Low temperature through-Si via fabrication using electroless deposition

Cited by 4 publications

References 5 publications

Control of Adhesion Strength and TSV Filling Morphology of Electroless Barrier Layer

Control of Adhesion Strength and TSV Filling Morphology of Electroless Barrier Layer

Improvement of Adhesion Strength of Electrolessbarrier Layer and Its Application to TSV Process

Control of Adhesion Strength and TSV Filling Morphology of Electroless Barrier Layer

Contact Info

Product

Resources

About