Low-temperature wafer-scale fabrication of vertical VO2 nanowire arrays

Abstract

Single-crystalline vanadium dioxide nanowires (VO2 NWs) have attracted significant interest due to their unique characteristics, which originate from the single-domain metal–insulator phase transition (MIT) property. However, the lack of facile technologies to produce vertical nanowire arrays (NAs) in a large area has limited the mass fabrication of VO2-based devices. Here, an antimony-assisted hydrothermal method is developed for the low-temperature production of wafer-scale vertical VO2 NAs on arbitrary substrates of glass, quartz, and silicon. Sb2O3 plays a key role in the controlled growth of pure VO2 (M1) by modulating the size, density, alignment, and MIT properties of VO2 NAs. Furthermore, the growth mechanism of vertical VO2 NAs is explained. In contrast to conventional fabrication technologies, the weak interaction between NA films and substrates enables a much easier transfer of VO2 NAs for various potential applications.

Fabrication of Epitaxial W-Doped VO2 Nanostructured Films for Terahertz Modulation Using the Solvothermal Process

“…Nevertheless, these VO 2 phases can easily be transformed into VO 2 (M 1 ) by subsequent thermal treatment. This process also retains the morphology of the as-grown product. − …”

Surfaces of VO2‐Polymorphs: Structure, Stability and the Effect of Doping

“…The present study will form the basis of a theoretical study of a particular example, the temperature‐controlled phase change in vanadium dioxide. Vanadium dioxide, VO 2 , is a widely studied compound because of its low temperature metal‐insulator transition which can be exploited in applications such as smart windows, [2] field‐effect transistors or memory devices [3] . At 340 K VO 2 is transformed from a monoclinic semiconductor (M 1 phase) to a metallic phase with rutile structure (R phase) [4] .…”

Fully Optically Tunable and Flexible Composite Films for Enhanced Terahertz Control and Multifunctional Terahertz Devices

“…In the past, VO 2 -based THz devices fabricated on a rigid substrate had a competitive modulation performance in the THz region, comparable to or even superior to THz devices, which were based on conventional semiconductor materials (e.g., Si, GaAs, Ge), carbon nanotubes, and emerging two-dimensional materials (e.g., graphene, transition-metal dichalcogenides). , The integration of nanotechnology with terahertz (THz) technology has rapidly developed, making nanomaterials play a key role in the field of THz technology. Nowadays, high-quality VO 2 nanomaterials with excellent properties, which are easily fabricated via hydrothermal methods and vapor transport methods, , can be a promising candidate for actively manipulating THz waves.…”

“…36,37 The integration of nanotechnology with terahertz (THz) technology has rapidly developed, making nanomaterials play a key role in the field of THz technology. Nowadays, high-quality VO 2 nanomaterials with excellent properties, which are easily fabricated via hydrothermal methods and vapor transport methods, 38,39 can be a promising candidate for actively manipulating THz waves.…”