2022
DOI: 10.1039/d2fd00046f
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Low temperature (Zn,Sn)O deposition for reducing interface open-circuit voltage deficit to achieve highly efficient Se-free Cu(In,Ga)S2 solar cells

Abstract: Cu(In,Ga)S2 holds the potential to become a prime candidate for use as the top cell in tandem solar cells owing to its tunable bandgap from 1.55 eV (CuInS2) to 2.50...

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Cited by 5 publications
(14 citation statements)
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“…[33] Before 2015, the best efficiency was reached with the addition of Ga, still using absorbers grown under Cu excess. [69] However, the current record solar cell with an efficiency of 15.5% [17] and all reported Cu(In,Ga)S 2 solar cells with efficiencies around 15% [19][20][21]70] are prepared from Cu-poor absorbers. The difference is attributed to the fact that Cu-rich solar cells are dominated by interface recombination.…”
Section: Deep Defectsmentioning
confidence: 99%
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“…[33] Before 2015, the best efficiency was reached with the addition of Ga, still using absorbers grown under Cu excess. [69] However, the current record solar cell with an efficiency of 15.5% [17] and all reported Cu(In,Ga)S 2 solar cells with efficiencies around 15% [19][20][21]70] are prepared from Cu-poor absorbers. The difference is attributed to the fact that Cu-rich solar cells are dominated by interface recombination.…”
Section: Deep Defectsmentioning
confidence: 99%
“…The best Cu(In,Ga)S 2 solar cells show efficiencies of around 15%. [17,[19][20][21]70] Figure 10 analyses their photovoltaic parameters as a ratio of the Shockley-Queisser parameter. The bandgaps are either given in the publication or inferred from the inflection point of the published EQE spectrum.…”
Section: Comparison Of Loss Mechanisms In Solar Cellsmentioning
confidence: 99%
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