Low Thermal Budget Fabrication and Performance Comparison of MFM Capacitors With Thermal and Plasma-Enhanced Atomic Layer Deposited Hf_0.45Zr_0.55O _x Ferroelectrics

Superhigh energy storage density on-chip capacitors with ferroelectric Hf0.5Zr0.5O2/antiferroelectric Hf0.25Zr0.75O2 bilayer nanofilms fabricated by plasma-enhanced atomic layer deposition

“…To find out the influence of thermal annealing on the textures of the dielectrics, the top TiN films of the TiN/dielectrics/TiN samples were removed by dry etching after post-annealing, and then the resulting samples were characterized by GIXRD, as shown in Fig. and O (111) phases, respectively 31,33 . For the FE/AFE stacks, the fitted two peaks appear at 29.8° and 30.17°, resulting from the T (011) and T (101) phases, respectively 33,34 .…”

“…22,30 Moreover, two weak diffraction peaks at ∼35.0° and ∼51.1° result from O (200)/T (110) and O (220)/T (200) phases, respectively, and the other two peaks originate from the TiN films. 31,32 Since the 2 θ values corresponding to the O (111) and T (101), (011) phases are very close for the Hf 1− x Zr x O 2 films due to their structural similarities, 31,33 the intense diffraction peak at ∼30° is further de-convoluted into several Gaussian peaks in order to clarify the phase composition, as shown in Fig. 4(b).…”

“…It is found that when the annealing time is maintained between 30 and 70 min, the resulting maximum ESD and ESE remain 111) phases, respectively. 31,33 For the FE/AFE stacks, the tted two peaks appear at 29.8 and 30.17 , resulting from the T (011) and T (101) phases, respectively. 33,34 The aforesaid results indicate that the introduction of a FE underlying lm prevents the formation of the ferroelectric O (111)-phase and generates a new antiferroelectric T (101) phase.…”

As-deposited ferroelectric HZO on a III–V semiconductor

“…Several studies instead focus on reducing the annealing temperatures, rather than realizing ferroelectricity in as-deposited films. 18,29 In our study, a similar approach was also taken for several of the 7 supercycle laminates, but no clear improvement in the remanent polarization was achieved until RTP at 450 °C for 300 s, after which a remanent polarization of P r = 14 µC/cm 2 was measured (available in supplementary material, Fig. S6).…”

Toward Low-Thermal-Budget Hafnia-Based Ferroelectrics via Atomic Layer Deposition

“…57,58 The HZO film deposited by TALD using H 2 O or O 3 as an oxidant gas typically has an amorphous structure. 92 On the other hand, PEALD process utilizing O 2 plasma was focused due to its strong oxidation power and high energy ion/electron bombardment. First, the effect of an oxidant gas on the crystallization of the as-grown HZO films prepared via the ALD process at 300 °C was investigated.…”