Low threshold continuous-wave lasing of yellow-green InGaN-QD vertical-cavity surface-emitting lasers

Weng, Guoen; Mei, Yang; Liu, Jianping; Hofmann, Werner; Ying, Leiying; Zhang, Jiangyong; Bu, Yikun; Li, Zengcheng; Yang, Hui; Zhang, Baoping

doi:10.1364/oe.24.015546

Cited by 59 publications

(34 citation statements)

References 23 publications

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“…In QD systems, polarization is altered by the shape of the QD and strain redistribution in the active region, leading to a reduction in QCSE . Promising results have been reported from InGaN QDs showing luminescence into green and red . While QD studies have expanded the capabilities of the nitride system for visible light applications, room exists for the nitrides to extend into infrared with higher indium composition designs …”

Section: Introductionmentioning

confidence: 99%

MOCVD Growth and Characterization of InN Quantum Dots

Reilly

Nakamura

DenBaars

et al. 2019

Physica Status Solidi (b)

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Metal‐polar InN quantum dots (QDs) are grown by metalorganic chemical vapor deposition at temperatures between 500 and 600 °C. Dot densities between 4 × 108 and 4 × 1010 cm−2 are observed. InN QDs exhibit room‐temperature photoluminescence (PL) with peak wavelengths from 1100 to >1550 nm. GaN cap layers grown on InN QDs have little effect on either peak PL wavelength or intensity, a step toward creating multilayer structures for InN QD devices.

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Section: Introductionmentioning

confidence: 99%

MOCVD Growth and Characterization of InN Quantum Dots

Reilly

Nakamura

DenBaars

et al. 2019

Physica Status Solidi (b)

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“…There are two main techniques used to attain green laser emission presently. The first one is GaN-based diode laser that directly emits in the green spectral range [1][2][3][4]. Although the green diode laser has made great strides in its power, efficiency and spectral coverage, it is still hard to achieve watt-class continuous power with high beam quality.…”

Section: Introductionmentioning

confidence: 99%

Beam Control in an Intracavity Frequency-Doubling Semiconductor Disk Laser

et al. 2019

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In this paper, we have demonstrated a 1.3 W green laser using a V-shaped intracavity frequency doubling 1036 nm semiconductor disk laser. The beam quality of the fundamental and second harmonic generation (SHG) laser is investigated. It has been found that the output lasers at the fundamental and SHG wavelength both suffer from reduced beam quality along with power scaling. The measured beam profile is elliptical under high power operation. In order to improve the SHG laser beam, an intracavity aperture is employed to control the mode characteristics of fundamental frequency light. By fine-tuning the aperture, a nearly circular beam profile with improving beam quality and brightness is realized.

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“…1,2 The progress of GaN-based VCSELs has been hampered by difficulties relating to growing low resistivity p-GaN, large lattice mismatch, and strong spontaneous and piezoelectric polarization fields in III-nitrides. Despite this, there have lately been several groups reporting on electrically injected GaN-based VCSELs [3][4][5][6][7][8][9][10][11][12] but further improvement is still needed in terms of lowering the threshold current density, increasing the output power and improving thermal stability.…”

Section: Introductionmentioning

confidence: 99%

Electrically conductive ZnO/GaN distributed Bragg reflectors grown by hybrid plasma-assisted molecular beam epitaxy

et al. 2017

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III-nitride-based vertical-cavity surface-emitting lasers have so far used intracavity contacting schemes since electrically conductive distributed Bragg reflectors (DBRs) have been difficult to achieve. A promising material combination for conductive DBRs is ZnO/GaN due to the small conduction band offset and ease of n-type doping. In addition, this combination offers a small lattice mismatch and high refractive index contrast, which could yield a mirror with a broad stopband and a high peak reflectivity using less than 20 DBR-pairs. A crack-free ZnO/GaN DBR was grown by hybrid plasma-assisted molecular beam epitaxy. The ZnO layers were approximately 20 nm thick and had an electron concentration of 1×10 19 cm −3 , while the GaN layers were 80-110 nm thick with an electron concentration of 1.8×10 18 cm −3. In order to measure the resistance, mesa structures were formed by dry etching through the top 3 DBR-pairs and depositing non-annealed Al contacts on the GaN-layers at the top and next to the mesas. The measured specific series resistance was dominated by the lateral and contact contributions and gave an upper limit of ∼10 −3 Ω cm 2 for the vertical resistance. Simulations show that the ZnO electron concentration and the cancellation of piezoelectric and spontaneous polarization in strained ZnO have a large impact on the vertical resistance and that it could be orders of magnitudes lower than what was measured. This is the first report on electrically conductive ZnO/GaN DBRs and the upper limit of the resistance reported here is close to the lowest values reported for III-nitride-based DBRs.

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Low threshold continuous-wave lasing of yellow-green InGaN-QD vertical-cavity surface-emitting lasers

Cited by 59 publications

References 23 publications

MOCVD Growth and Characterization of InN Quantum Dots

MOCVD Growth and Characterization of InN Quantum Dots

Beam Control in an Intracavity Frequency-Doubling Semiconductor Disk Laser

Electrically conductive ZnO/GaN distributed Bragg reflectors grown by hybrid plasma-assisted molecular beam epitaxy

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