Low-threshold continuous-wave Raman silicon laser

Rong, Haisheng; Xu, Shengbo; Kuo, Ying Hao; Sih, Vanessa; Cohen, Oded; Raday, Omri; Paniccia, Mario

doi:10.1038/nphoton.2007.29

Cited by 271 publications

(202 citation statements)

References 40 publications

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“…However, study finds that the stimulated Raman scattering (SRS) and free carrier dispersion (FCD) effects are strong in Si [35], which make active devices for optical amplification, lasing and modulating possible in Si. Rong et al [36] demonstrated a kind of Raman Si laser based on a ring-resonator-cavity in 2007, which dramatically decreased the threshold pump power to 20 mW. The first Ge-on-Si laser operating at room temperature was reported in 2010, smartly using the pseudodirect gap properties of Ge [37].…”

Section: Silicon Photonic Components For Pnocmentioning

confidence: 99%

Silicon photonic network-on-chip and enabling components

Qiu

et al. 2013

Sci. China Technol. Sci.

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As the transistor's feature scales down and the integration density of the monolithic circuit increases continuously, the traditional metal interconnects face significant performance limitation to meet the stringent demands of high-speed, low-power and low-latency data transmission for on-and off-chip communications. Optical technology is poised to resolve these problems. Due to the complementary metal-oxide-semiconductor (CMOS) compatible process, silicon photonics is the leading candidate technology. Silicon photonic devices and networks have been improved dramatically in recent years, with a notable increase in bandwidth from the megahertz to the multi-gigahertz regime in just over half a decade. This paper reviews the recent developments in silicon photonics for optical interconnects and summarizes the work of our laboratory in this research field. interconnects, optical technology, complementary metal-oxide-semiconductor (CMOS), silicon photonics Citation:Hu T, Qiu C, Yu P, et al. Silicon photonic network-on-chip and enabling components.

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Section: Silicon Photonic Components For Pnocmentioning

confidence: 99%

Silicon photonic network-on-chip and enabling components

Qiu

et al. 2013

Sci. China Technol. Sci.

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“…Enhanced surface recombination in photonic wire waveguides and ion-implantationinduced defects in the waveguide have also been shown to reduce the carrier lifetime [21]. A group at Intel reported Raman lasing in a 25 V reverse-biased p-i-n silicon waveguide with a threshold of 20 mW in 2007 [22]. Th at waveguide displays a slope effi ciency of 28% and an output power of 50 mW.…”

Section: Silicon Integrated Lasersmentioning

confidence: 99%

Device engineering for silicon photonics

Chen

Tsang

2011

NPG Asia Mater

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A fter an impressive initial spurt of progress in device engineering during the early 2000s when the optical communications industry saw unprecedented levels of investment, silicon photonics continues to develop at an amazing pace. Many novel applications and devices are emerging. Silicon photonics has the potential to become a major platform for optoelectronic integrated circuits (OEICs) and to be used in high-speed optical interconnects for chip-level data communications because of the extremely large bandwidth and high speed off ered by optical communications. Many challenges have been addressed through the introduction of innovative ideas, paving the way for the practical deployment of silicon-based optoelectronic devices and integrated photonic circuits in computing and telecommunication systems [1]. Th e commercialization of silicon photonics, originally driven by applications in telecommunications, is now also driven by the needs of the computing industry for highspeed, energy-effi cient optical cable technology, such as the Light Peak Technology under development by Intel (USA). Th e California-based company Luxtera (USA) has also commercialized a series of siliconphotonic transceiver systems.Silicon off ers many advantages over alternative material systems (e.g. InP, GaAs, LiNbO 3 ) for OEIC applications. One major reason for the wide interest that silicon photonics is attracting is the cost advantage that silicon photonics can potentially off er through its compatibility with the complementary metal-oxide-semiconductor (CMOS) fabrication processes used in the microelectronics industry. Th e huge investments that have been made in CMOS microelectronics fabrication technologies has resulted in processes that off er much higher yield than is possible using alternative materials for photonics, thus making feasible large-scale integration and the production of silicon-photonic devices that are monolithically integrated with not only optical components but also electronic circuits in the same platform at ultrahigh density. Another reason for the attractiveness of silicon photonics is the high refractive index contrast between the silicon core (refractive index, 3.48) and silicon dioxide cladding (refractive index, 1.45) in silicon-on-insulator (SOI) devices, which ensures the submicrometer confi nement of light and allows tight bending in optical waveguides. Th e high-density integration of photonic circuits on SOI platforms is thus feasible. Th e low cost of high-quality SOI wafers is another advantage of silicon photonics. All kinds of low-cost devices enabled by silicon photonics are therefore predicted, and these may also enjoy the other benefi ts of monolithic integration: smaller size, increased power effi ciency and improved reliability. Figure 1 shows an example of a high-density integrated photonics devices fabricated on a 6-inch SOI wafer using CMOS-compatible technology.In this article, we review some of the exciting progress that has been made in silicon photonics with the aim of providing a broa...

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“…In recent years, miniaturization of Raman silicon laser has been successfully achieved with the assistance of reverse-biased p-i-n diode at centimeter size or photonics-crystal with high-quality-factor nanocavity at micrometer size. [7][8][9] However, for applications such as high-resolution medical imagings or on-chip optical communications, 'ultimate' nanolasers with scalable, thresholdless, …”

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confidence: 99%

A Thresholdless Tunable Raman Nanolaser using a ZnO–Graphene Superlattice

Zhu

Tian

et al. 2016

Advanced Materials

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Nanolasers based on surface plasmon opens up new platform for advanced nanophotonics technologies. [1][2][3][4][5][6] As Raman scattering process convert pump laser into new frequencies, so development of Raman nanolaser may allows for tunable nanolasers and boost the development of innovative nanophotonics technology. The Raman conversion for conventional Raman laser is intrinsically challenging as high intensities of the pump laser are required to drive the nonlinear effect. In recent years, miniaturization of Raman silicon laser has been successfully achieved with the assistance of reverse-biased p-i-n diode at centimeter size or photonics-crystal with high-quality-factor nanocavity at micrometer size. [7][8][9] However, for applications such as high-resolution medical imagings or on-chip optical communications, 'ultimate' nanolasers with scalable, thresholdless,

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Low-threshold continuous-wave Raman silicon laser

Cited by 271 publications

References 40 publications

Silicon photonic network-on-chip and enabling components

Silicon photonic network-on-chip and enabling components

Device engineering for silicon photonics

A Thresholdless Tunable Raman Nanolaser using a ZnO–Graphene Superlattice

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