Low threshold current density of InAs quantum dash laser on InP (100) through optimizing double cap technique

Zhou, Dayong; Piron, Rozenn; Dontabactouny, Madhoussoudhana; Dehaese, Olivier; Grillot, Frédéric; Batté, Thomas; Tavernier, Karine; Even, Jacky; Loualiche, Slimane

doi:10.1063/1.3088862

Cited by 20 publications

(9 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…30(a). The optimized double capping technique, primarily developed for the InAs/InP Qdots growth (discussed in section 2.2), was also employed by Zhou et al [6,7] to obtain homogeneous Qdashes and to tune the emission wavelength of a single and multi-stack InAs/InGaAsP Qdash structures on (100)InP substrate. By selecting a thin 2.2 nm first capping layer and short 30 s growth interruption time, they measured a room temperature PL linewidth of 60 meV from 5 stacked Qdash structure (TN-S) centered at 1.55 µm, shown in Figs.…”

Section: Qdashes On (100) Inp Substratementioning

confidence: 99%

“…However, the significant reduction of size and shape dispersion (large inhomogeneous broadening) of these nanostructures due to selfassemble growth procedure still pose a challenge in achieving high quality epitaxial material and device performance. Currently, the size dispersion, characterized in terms of photoluminescence (PL) linewidth (full-width-at-half-maximum, FWHM), are ~20 meV at 10 K for Qdots [4] and ~50 meV at room temperature for Qdashes [5][6][7]. These values indicate further improvement is required to make it as competitive as the matured InAs/GaAs Qdots on GaAs substrate technology [1,2].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

View full text Add to dashboard Cite

The advances in lasers, electronic and photonic integrated circuits (EPIC), optical interconnects as well as the modulation techniques allow the present day society to embrace the convenience of broadband, high speed internet and mobile network connectivity. However, the steep increase in energy demand and bandwidth requirement calls for further innovation in ultra-compact EPIC technologies. In the optical domain, innovation in the laser technologies beyond the current quantum well (Qwell) based laser technologies are already taking place and presenting very promising results. Homogeneously grown quantum dot (Qdot) lasers, can serve in the future energy saving information and communication technologies (ICT) as the work-horse for transmitting information through optical fiber. The encouraging results in the zero-dimensional (0D) structures emitting at 980 nm, in the form of vertical cavity surface emitting laser (VCSEL), are already operational at low threshold current density and capable of 40 Gbps error-free transmission at 108 fJ/bit. Eventual achievements for lasers operating in the O-, C-, L-, U-bands, and beyond will eventually lay the foundation for green ICT. On the hand, the inhomogeneously grown quasi 0D quantum dash (Qdash) lasers are brilliant solutions for potential broadband connectivity in server farms or access network. A single broadband Qdash laser operating in the stimulated emission mode can replace tens of discrete narrow-band lasers in dense wavelength division multiplexing (DWDM) transmission thereby further saving energy, cost and footprint. In this article, we review the progress of both Qdots and Qdash devices based on the InAs/InGaAlAs/InP and InAs/InGaAsP/InP material systems, from the angles of growth and device performance.2

show abstract

Section: Qdashes On (100) Inp Substratementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

View full text Add to dashboard Cite

show abstract

“…When it comes to the static performance characteristics, Zhou et al [49,50] reported the smallest value of threshold current density (72 A/cm 2 per layer) and transparency current density (45 A/cm 2 per layer) on a InAs/InGaAsP Qdash material system. The 5-stack Qdash-in-barrier SCH laser structure was grown through the optimized double-cap technique, and employing a 2.2 nm cap with a 30-s growth interruption.…”

Section: Inas/ingaasp/inp Qdash Lasersmentioning

confidence: 99%

InAs/InP quantum-dash lasers

Khan

Alkhazraji

et al. 2019

Nanoscale Semiconductor Lasers

View full text Add to dashboard Cite

“…Such nanostructures can be grown using solid-source molecular beam epitaxy ͑MBE͒, 2 gas-source MBE, [3][4][5] or metal-organic vapor-phase epitaxy ͑MOVPE͒. 6,7 For nanostructure formation, the InAs material can be deposited directly on the InP substrate.…”

Section: Introductionmentioning

confidence: 99%

InAs nanostructures on InGaAsP/InP(001): Interaction of InAs quantum-dash formation with InGaAsP decomposition

Genz

Lenz

Eisele

et al. 2010

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

View full text Add to dashboard Cite

Cross-sectional scanning tunneling microscopy is used to study the spatial structure and composition of self-assembled InAs nanostructures grown on InGaAsP lattice matched to the InP substrate. Images of the (110) and ((1) over bar 10) cleavage surfaces reveal InAs quantum dashes of different lateral extensions. They are found to be about 60 nm long, about 15 nm wide, about 2 nm high, and to consist of pure InAs. Furthermore, the quaternary InGaAsP matrix material below, in between, and above the quantum-dash layers shows a strong lateral contrast variation, which is related to a partial decomposition into columns of more InAs-rich and more GaP-rich regions. The effect is particularly pronounced along the [110] direction. A quantitative analysis of this strain-induced contrast yields a decomposition characterized by variations of the group-III and/or group-V concentrations in the order of +/- 10%. The data strongly indicate that the strain at the growth surface induced by the decomposition of the underlying matrix material plays an important role for the nucleation and formation of the quantum dashes as well as for their unexpected stacking over interlayer distances as large as 40 nm. Despite of the observation that the quantum dashes enforce the decomposition, which was already developed directly at the InGaAsP/InP interface without any influence of the subsequently grown InAs quantum dashes

show abstract

Low threshold current density of InAs quantum dash laser on InP (100) through optimizing double cap technique

Cited by 20 publications

References 12 publications

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

InAs/InP quantum-dash lasers

InAs nanostructures on InGaAsP/InP(001): Interaction of InAs quantum-dash formation with InGaAsP decomposition

Contact Info

Product

Resources

About