Low threshold monocrystalline Nd:(Gd, Lu)_2O_3 channel waveguide laser

Kahn, A.; Heinrich, S.; Kühn, Henning; Petermann, K.; Bradley, Jonathan D. B.; Wörhoff, Kerstin; Pollnau, Markus; Huber, G.

doi:10.1364/oe.17.004412

Cited by 22 publications

(12 citation statements)

References 16 publications

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“…A testament of this ability is the growth of rare-earth-doped sesquisoxide waveguide layers at a temperature around 650°C [103,104], well below their melting temperature of over 2400°C. The high melting temperature of these crystals in combination with their phase transition point that lies below their melting point, make their growth in bulk form very challenging [116].…”

Section: Pulsed Laser Deposition (Pld)mentioning

confidence: 99%

“…In this respect, another notable example is the deposition of Ti:sapphire layers with a degree of crystal perfection comparable with the commercial bulk crystals used as targets, at temperatures around 975ºC, which is well below the melting temperature of the bulk crystal (~2200ºC) [117]. Finally, it is worth noting that PLD has also proven suitable for two-dimensional, lattice matched, layer-by-layer growth of rare-earthactivated planar waveguides [103,104,118]. This mode of growth is an effective approach to engineering enhanced index contrast between film and substrate, which is important for integrated optics devices.…”

Section: Pulsed Laser Deposition (Pld)mentioning

confidence: 99%

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Optically pumped planar waveguide lasers, Part I: Fundamentals and fabrication techniques

Grivas

2011

Progress in Quantum Electronics

194

102

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Abstract:The tremendous interest in the field of waveguide lasers in the past two decades is largely attributed to the geometry of the gain medium, which provides the possibility to store optical energy on a very small dimension in the form of an optical mode. This allows for realization of sources with enhanced optical gain, low lasing threshold, and small footprint and opens up exciting possibilities in the area of integrated optics by facilitating their on-chip integration with different functionalities and highly compact photonic circuits. Moreover, this geometrical concept is compatible with high power diode pumping schemes as it provides exceptional thermal management, minimizing the impact of thermal loading on laser performance. The proliferation of techniques for fabrication and processing capable of producing high optical quality waveguides has greatly contributed to the growth of waveguide lasers from a topic of fundamental research to an area that encompasses a variety of practical applications. In this first part of the review on optically pumped waveguide lasers the properties that distinguish these sources from other classes of lasers will be discussed. Furthermore, the current state-of-the art in terms of fabrication tools used for producing waveguide lasers is reviewed from the aspects of the processes and the materials involved. 2 1.IntroductionOver the last two decades the field of solid-state planar waveguide lasers has experienced a steady growth, progressing from a laboratory curiosity to an area that demonstrates a broad spectrum of applications, from multiwavelength laser channel arrays for telecommunications to diode-pumped planar structures with multiwatt output powers for sensing and ranging applications. Waveguide lasers are by no means a new field and the first report on such a source dates back in 1961, when laser operation of a waveguide based on an active glass core rod embedded in a low refractive index cladding was demonstrated [1]. However research efforts in the years that followed this report focused primarily on the development of optically pumped laser sources based on high optical quality bulk dielectric laser media in the form of rods and slabs. The merits of the waveguide geometry and the associated optical confinement have been first highlighted in single mode glass optical fibers. Fibers have proven an enabling technology for realization of highly efficient amplifier and laser sources owing to their unrivalled low loss performance and ability to maintain a small spot size and hence high intensities over lengths that are orders of magnitude longer than would normally be allowed by diffraction, [2,3]. Er-doped fiber amplifiers (EDFAs) in particular have directly contributed to the enormous expansion of the optical communications networks that underpin today's internet infrastructure by allowing for signal regeneration and optical data transmission over long distances. The excellent performance of fiber lasers and amplifiers provided motivation and triggered a major techn...

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Section: Pulsed Laser Deposition (Pld)mentioning

confidence: 99%

Section: Pulsed Laser Deposition (Pld)mentioning

confidence: 99%

Optically pumped planar waveguide lasers, Part I: Fundamentals and fabrication techniques

Grivas

2011

Progress in Quantum Electronics

194

102

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“…Despite the high growth temperatures required for deposition (∼700 • C or above), growth of various sesquioxide films has been achieved via PLD [6,7], including doped and undoped Y 2 O 3 [8][9][10][11]. Lasing has been observed in Nd:(Gd,Lu) 2 O 3 [12] and Yb:(Gd,Lu) 2 O 3 [13] channel waveguides formed by postprocessing of PLD-grown films. Estimated optical losses (propagation + unquantified coupling losses) in these latter cases have, however, been high (>4 dBcm −1 ), and thicknesses limited to ∼2 µm.…”

Section: Introductionmentioning

confidence: 99%

Laser operation of a Tm:Y_2O_3 planar waveguide

Szela¹,

Sloyan²,

Parsonage³

et al. 2013

Opt. Express

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“…However, up to now no reports on lasing obtained from RE:sapphire can be found. Nevertheless PLD has proven to be a versatile method to grow thin films capable for laser oscillation in waveguide configuration in well‐established materials such as garnets as well as emerging materials like sesquioxides .…”

Section: Introductionmentioning

confidence: 99%

Lasing of Nd³⁺ in sapphire

Waeselmann

Heinrich

Kränkel

et al. 2016

Laser & Photonics Reviews

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We present a rare‐earth‐doped sapphire laser. Single‐crystalline α‐Al2O3 films doped with trivalent neodymium have been grown by pulsed laser deposition on undoped sapphire substrates. The Nd3+ doping concentrations of the films have been varied between 0.3 at.% and 2 at.%. Epitaxial growth was proven by structural and optical characterization of the films. The samples exhibit strongly polarization dependent emission transitions from the 4F3/2 manifold with a fluorescence lifetime of 108 μs and peak emission cross sections of 1.1 × 10−18 cm2 around 1100 nm. Lasing at 1096.5 nm was achieved under Ti:sapphire‐pumping in a planar waveguide configuration with a maximum cw output power of 137 mW and a slope efficiency of 7.5% with respect to the incident pump power.

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Low threshold monocrystalline Nd:(Gd, Lu)_2O_3 channel waveguide laser

Cited by 22 publications

References 16 publications

Optically pumped planar waveguide lasers, Part I: Fundamentals and fabrication techniques

Optically pumped planar waveguide lasers, Part I: Fundamentals and fabrication techniques

Laser operation of a Tm:Y_2O_3 planar waveguide

Lasing of Nd³⁺ in sapphire

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Low threshold monocrystalline Nd:(Gd, Lu)_2O_3 channel waveguide laser

Cited by 22 publications

References 16 publications

Optically pumped planar waveguide lasers, Part I: Fundamentals and fabrication techniques

Optically pumped planar waveguide lasers, Part I: Fundamentals and fabrication techniques

Laser operation of a Tm:Y_2O_3 planar waveguide

Lasing of Nd3+ in sapphire

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Lasing of Nd³⁺ in sapphire