progresses, grand challenges remain for semiconductor small lasers, including high power operation, expensive fabrication proceeding, and multicolor output. Exploring new optical gain materials provides a solution to overcome these problems. Recently, metal halide perovskites have attracted considerable attentions and experienced fast development in optoelectronic applications. [6][7][8][9][10] In general, perovskites are a class of compounds with general formula ABX 3 or A 2 BX 4 , where A is monovalent cation, B is divalent metal cation, and X is halide anion, respectively. Along with low-cost fabrication process, perovskites own high absorption coefficient, low trapping states, and low Auger recombination rate, which make them excellent optical gain materials for low threshold lasing devices. [11][12][13][14][15][16][17] Very recently, continuous wave (CW) optically pumped lasing has been accomplished from the structures including CH 3 NH 3 PbI 3 (MAPbI 3 ) films coupled with distributed Bragg reflector, CsPbBr 3 NWs, and so on. [18][19][20] Also, the easy tuning of optical bandgap and long carrier diffusion length promise the realization of full-visible-spectrum and electrically driven operation, respectively. [21][22][23][24][25] For pure dielectric materials, the laser size is constrained by the diffraction limit and cannot be lower than the half of optical wavelength, typically several hundred nanometers, equivalently one order of magnitude larger than the feature size of modern transistor. Surface plasmon (SP) is a collective oscillation of free electrons occurring at metal-dielectric interface. [26][27][28] After coupling with SP, the optical waves can be confined into subwavelength scale through storing their energies into the free electron oscillations. On the one hand, it leads to large enhancement of local field intensity, which has been widely used to tailor the linear and nonlinear light-matter interaction. [29][30][31][32][33][34][35][36][37][38][39] On the other hand, it provides opportunities to achieve coherent light source below the optical diffraction limitation in the form of plasmonic laser, which extensively increases the possibility of replacing electronic circuits with optical circuits in semiconductor industry. [40][41][42] Since the concept on surface plasmon amplification by stimulated emission (SPASER) was proposed in 2003, plasmonic lasers have been experimentally implemented in the structures of metallic-nanoparticle, metal-insulator-semiconductor, metallic-cladded cavities, and plasmonic lattices. [43][44][45][46][47][48][49][50][51][52][53][54] With the rapid advances in theory and materials sciences, considerable attentions have been taken onto applicable-level plasmonic lasers with high-speed, multicolor, electrically driven operation as well as their applications in Recently, low-dimensional metal halide perovskites have attracted great attention from micro/nanolaser research fields owing to their low-cost fabrication process and outstanding optical/electronic properties. The ...