Low-threshold room-temperature CW operation of ZnSe-basedblue/green laser diodes grown on conductive ZnSe substrates

Nakanishi, Futoshi; Doi, H.; Okuda, Norikazu; Matsuoka, Takashi; Kawasaki, Koji; Saegusa, Akihiko; Matsubara, Hideaki; Yamada, Takehiro; Uemura, Taku; Irikura, Motoki; Nishine, Shiro

doi:10.1049/el:19980357

Cited by 9 publications

(6 citation statements)

References 5 publications

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“…This resulted in the noticeable change of the reflection high energy electron diffraction ͑RHEED͒ pattern from a spotty 1ϫ1 pattern to a streaky C(2ϫ2) one. After succeeding in the 74-s-lived laser case, 5 we have improved our rf plasma cleaning conditions and are able to reproduce EPDs of 1 -3ϫ10 4 cm Ϫ2 routinely.…”

Section: ͓S0003-6951͑98͒03227-6͔mentioning

confidence: 99%

“…5 and consists of a 0.8-m-thick n-ZnSe buffer layer; a 1.0-m-thick n-ZnMgSSe cladding layer; a 0.15-m-thick n-ZnSe optical guiding layer; a 4-nm-thick ZnCdSe active layer; a 0.15-mthick p-ZnSe optical guiding layer; a 1.0-m-thick p-ZnMgSSe cladding; a 0.2-m-thick p-ZnSe layer; a 40-nm-thick pseudograded ZnSe/ZnTe multiple quantum well ͑MQW͒ layer and a 60-nm-thick p-ZnTe top contact layer. The material was processed into gain-guided lasers with 20-m-wide stripes.…”

Section: ͓S0003-6951͑98͒03227-6͔mentioning

confidence: 99%

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Lasing characteristics of low threshold ZnSe-based blue/green laser diodes grown on conductive ZnSe substrates

Kawasaki

Yao

Nakanishi

et al. 1998

Applied Physics Letters

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Room temperature continuous wave operation of ZnSe-based blue/green laser diodes grown homoepitaxially on conductive ZnSe substrates with threshold current densities as low as 176 A/cm2 has been demonstrated. This is the lowest reported threshold among all short wavelength lasers in the blue/green region. Lifetimes at room temperature of up to 2.1 h have been obtained for lasers with pre-existing defect densities lower than 3×104 cm−2.

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Section: ͓S0003-6951͑98͒03227-6͔mentioning

confidence: 99%

Section: ͓S0003-6951͑98͒03227-6͔mentioning

confidence: 99%

Lasing characteristics of low threshold ZnSe-based blue/green laser diodes grown on conductive ZnSe substrates

Kawasaki

Yao

Nakanishi

et al. 1998

Applied Physics Letters

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“…Light emitting diodes [3,4] as well as lasing devices [5,6] were demonstrated in this material. However, at high injection currents or high pump powers, degeneration of the spontaneous and stimulated emission from such devices is caused by strain relaxation and interdiffusion [7].…”

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confidence: 99%

Extending the spectral range of CdSe/ZnSe quantum wells by strain engineering

et al. 2015

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We demonstrate efficient room-temperature photoluminescence and spectral tuning of epitaxially grown ZnSe/CdSe quantum well structures almost over the whole visible spectrum (470-600 nm wavelength). The key element to achieve the observed high quantum efficiency and enormous tuning range was the implementation of a special strain engineering technique, which allows us to suppress substantial lattice relaxation of CdSe on ZnSe. Previous studies indicated that a CdSe coverage exceeding 3 ML on ZnSe results in the formation of extensive lattice defects and complete quenching of the photoluminescence at low and room temperature. In contrast, our approach of strain engineering enables the deposition of planar CdSe quantum wells with a thickness ranging from 1 to 6 ML with excellent optical properties. We attribute the observed experimental features to a controllable strain compensation effect that is present in an alternating system of tensile and compressively strained epitaxial layers and supported this model by calculations of the transition energies of the ZnSe/CdSe quantum wells. PACS number(s): 85.60.−q, 71.20.Mq, 78.55.−m, 78.67.−n 1098-0121/2015/91(3)/035409(8) 035409-1

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“…The quality of heteroepitaxial devices could be improved to reach lifetimes of up to 400 h [1]. Recently it has been shown that also ZnSe-substrates offer the potential to realize devices for cw-operation at room temperature [2].The aim of this paper is to compare the dynamic behavior of heteroepitaxially grown laser diodes to homoepitaxially grown ones. Both investigated samples were double heterostructure separate confinement laser diodes.…”

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Comparison of Long-Time Delay in Lasing in Homo- and Heteroepitaxially Grown II-VI Laser Diodes

et al. 1998

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Gain guided laser diodes exhibit unexpected low threshold current densities. Under these conditions, lasing only occurs under a current dependent long-time delay, which is three orders of magnitude larger than the time needed to reach population inversion. This effect is attributed to a thermally induced index guiding. The change in temperature of the quantum well region can be estimated using the shift in the wavelength of emission to be up to 70 K. As a further consequence, the threshold current density can be reduced by a factor of 4 simply by changing the pulse width of the applied current.PACS numbers: 42.55.ΡχZnSe laser diodes (LD) grown on GaAs have been investigated for the past six years. The quality of heteroepitaxial devices could be improved to reach lifetimes of up to 400 h [1]. Recently it has been shown that also ZnSe-substrates offer the potential to realize devices for cw-operation at room temperature [2].The aim of this paper is to compare the dynamic behavior of heteroepitaxially grown laser diodes to homoepitaxially grown ones. Both investigated samples were double heterostructure separate confinement laser diodes. The heteroepitaxial structure was grown on GaAs-substrate and consists of MgZnSSe claddings of 1000 nm,. ZnSSe waveguides of 100 nm to both sides of the quantum well (QW), a 4 nm thin CdZnSSe quantum well and a conventional ZnSeTe contact layer. For the homoepitaxial laser diode, an aluminum-doped ZnSe-substrate was used. This diode was identical to the heteroepitaxial device except for the quaternary cladding layer which was lattice matched to ZnSe and the waveguide which was grown from ZnSe instead of ZnSSe. The CdZnSe quantum well was 4 nm thin, as well. The contact layers consisted of a low resistivity ZnSeTe-multilayer. Details of growth can be found elsewhere [3,4]. A palladium-gold contact was evaporated to the p-side and Al2O3 was used as insulating material to form stripe widths of 10 m and 20 m, respectively. No etching beside the contact was performed. The lasers with a cavity length of 590 m and 755 μm, respectively, were mounted episide up, i.e. with the substrate side onto copper heat sinks.(355)

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Low-threshold room-temperature CW operation of ZnSe-basedblue/green laser diodes grown on conductive ZnSe substrates

Cited by 9 publications

References 5 publications

Lasing characteristics of low threshold ZnSe-based blue/green laser diodes grown on conductive ZnSe substrates

Lasing characteristics of low threshold ZnSe-based blue/green laser diodes grown on conductive ZnSe substrates

Extending the spectral range of CdSe/ZnSe quantum wells by strain engineering

Comparison of Long-Time Delay in Lasing in Homo- and Heteroepitaxially Grown II-VI Laser Diodes

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