Low-Voltage and High-Speed Voltage-Controlled Ring Oscillator with Wide Tuning Range in 0.18 µm Complementary Metal Oxide Semiconductor

Tiao, Yu-Sheng; Sheu, Meng-Lieh; Tsao, Lin-Jie

doi:10.7567/jjap.50.04de11

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Low-power and Low-phase-noise Vco1

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2015

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“…1, a PMOS transistor M p and an NMOS transistor M n are a cross-coupled pair to generate negative resistance to satisfy oscillation start-up condition. [18][19][20] The same current from V dd is flowing into M p and M n through the inductor of the LC tank. The current-reuse structure uses both PMOS and NMOS; however, these two transistors are switched on and off simultaneously, which is different from the standard CMOS VCO.…”

Section: Low-power and Low-phase-noise Vcomentioning

confidence: 99%

0.5 V 5.8 GHz highly linear current-reuse voltage-controlled oscillator with back-gate tuning technique

Ikeda¹,

Lee²,

Ito³

et al. 2015

Jpn. J. Appl. Phys.

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In this paper, we present a voltage-controlled oscillator (VCO), which achieves highly linear frequency tuning under a low supply voltage of 0.5 V. To obtain the linear frequency tuning of a VCO, the high linearity of the threshold voltage of a varactor versus its back-gate voltage is utilized. This enables the linear capacitance tuning of the varactor; thus, a highly linear VCO can be achieved. In addition, to decrease the power consumption of the VCO, a current-reuse structure is employed as a cross-coupled pair. The proposed VCO was fabricated using a 65 nm Si complementary metal oxide semiconductor (CMOS) process. It shows the ratio of the maximum VCO gain (KVCO) to the minimum one to be 1.28. The dc power consumption is 0.33 mW at a supply voltage of 0.5 V. The measured phase noise at 10 MHz offset is −123 dBc/Hz at an output frequency of 5.8 GHz.

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Section: Low-power and Low-phase-noise Vcomentioning

confidence: 99%