is one of the most decisive factors in the excellent performance of spintronic devices. [1,2] Researches have intensely studied EB properties due to the importance applications in magnetic random access memories and magnetoresistive read heads based on spin valves or tunnel junctions. [3] If EB is combined with the perpendicular magnetic anisotropy (PMA), [1] it is promising to develop magnetic devices with ultrahigh density. [4] One existing challenge for AFM spintronics is the effective regulation of magnetization. [5] Although the AFM materials are essentially magnetic, they do not have macroscopic magnetization due to the alternatively antiparallel magnetic spins. [6] Therefore, AFM materials are very insensitive to the magnetic perturbation. [7] As an alternative, voltage control of magnetism provides a promising way in realizing next generation of fast, compact, and energy-efficient magnetic memories and sensors. [8][9][10] There are some studies related to the piezoelectric strain-controlled EB with in-plane anisotropy, [9,11,12] demonstrating the feasibility of using electric field (E-field) to manipulate AFM moments and domains. E-field induced interfacial strain mediation can also regulate the spin structure of AFM materials [13] with an excellent fatigue durability, [14] which is promising in anti-ferromagnetic piezospintronics. Nevertheless, because the alternative spins of AFM materials are strongly pinned, [15] the existing E-field controls of EB and AFM spins are usually confined at a low temperature [1,16] or require a large H-field assistance. [13] Although the magnetoelectric (ME) switching of perpendicular EB has been studied by changing the interfacial exchange and magnetization at low temperature, [1] the control of perpendicular EB by strain-mediated ME coupling has not been demonstrated yet. Therefore, we considered perpendicular EB on ferroelectric Pb(Mg 1/3 Nb 2/3 )O 3 -PbTiO 3 (PMN-PT) [17] substrate to realize the electrical modulation of anti-ferromagnetism.In this work, we utilized vibrating sample measurements (VSM) and ferromagnetic resonance (FMR) to study the strainmediated voltage control effect. Both the film fabrication and characterization were carried at room temperature, which has overcome the requirement of a high-temperature magnetic annealing during the EB formation [18] as well as the difficulty of Perpendicular exchange bias (EB), which combines perpendicular magnetic anisotropy and ferromagnetic (FM)-anti-ferromagnetic (AFM) exchange coupling, is extremely important in high-density AFM spintronics. However, the effective modulation of EB remains challenging, since the alternant spins at the AFM/ FM interface are strongly pinned by the AFM layer. Voltage tuning of EB through magnetoelectric coupling provides a potential way to achieve rapid magnetization switching in an energy-efficient manner. Nevertheless, the interfacial strain mediation of perpendicular EB induced by E-field remains unexplored. In this work, perpendicular EB nanostructure by room-temperature fabri...