Low-Voltage Double-Gate ZnO Thin-Film Transistor Circuits

Li, Y. V.; Ramirez, J. Israel; Sun, Kaige; Jackson, Thomas N.

doi:10.1109/led.2013.2263193

Cited by 32 publications

(8 citation statements)

References 19 publications

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“…Two-dimensional (2D) crystalline nanomaterials have generated widely growing interest for diverse applications on mechanically soft flexible substrates owing to their generally inert surface, high elasticity, and thickness scalability down to a monolayer, which represents the ideal limit for electrostatic control, optical transparency, and bendability. − Over the past decade, graphene has been the foremost 2D atomic crystal investigated for flexible nanoelectronics with substantial advances in large-scale synthesis, device mobility, cutoff frequency, strain tolerance, and mechanical robustness. − ,− However, its lack of a bandgap results in a transistor that cannot be switched off by a gate voltage, an indispensable requirement for the vast majority of circuits in modern electronic systems . Recently, transitional metal dichalcogenides (TMDs) such as MoS 2 and WSe 2 have emerged as suitable layered semiconductors that offer a sizable bandgap attractive for low-power electronics. ,,,, Nonetheless, despite promising theoretical prospects, , experimental TMD device mobilities have been relatively low, less than 50 cm 2 /V·s on flexible substrates so far, ,− a value comparable to established amorphous materials such as metal oxide semiconductors that have transitioned into application products. − …”

Section: Resultsmentioning

confidence: 99%

Flexible Black Phosphorus Ambipolar Transistors, Circuits and AM Demodulator

et al. 2015

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High-mobility two-dimensional (2D) semiconductors are desirable for high-performance mechanically flexible nanoelectronics. In this work, we report the first flexible black phosphorus (BP) field-effect transistors (FETs) with electron and hole mobilities superior to what has been previously achieved with other more studied flexible layered semiconducting transistors such as MoS2 and WSe2. Encapsulated bottom-gated BP ambipolar FETs on flexible polyimide afforded maximum carrier mobility of about 310 cm(2)/V·s with field-effect current modulation exceeding 3 orders of magnitude. The device ambipolar functionality and high-mobility were employed to realize essential circuits of electronic systems for flexible technology including ambipolar digital inverter, frequency doubler, and analog amplifiers featuring voltage gain higher than other reported layered semiconductor flexible amplifiers. In addition, we demonstrate the first flexible BP amplitude-modulated (AM) demodulator, an active stage useful for radio receivers, based on a single ambipolar BP transistor, which results in audible signals when connected to a loudspeaker or earphone. Moreover, the BP transistors feature mechanical robustness up to 2% uniaxial tensile strain and up to 5000 bending cycles.

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Section: Resultsmentioning

confidence: 99%

Flexible Black Phosphorus Ambipolar Transistors, Circuits and AM Demodulator

et al. 2015

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“…Two dimensional (2D) atomic layered semiconductors have been widely studied as promising candidates for flexible nanosystems with functionalities ranging from sensing to wireless communication owing to their compelling electrical, optical, and mechanical properties, including ultimate thickness scalability down to one atomic layer, ideal electrostatic control, and superior mechanical flexibility with strain limit >20%. − As the most studied 2D layered nanomaterial, graphene with high carrier mobilities (∼10 000 cm 2 /(V·s) at room temperature) is most promising for ultrahigh-frequency analog nanosystems, such as terahertz detectors. , The zero bandgap semimetal nature of graphene, however, results in low field-effect modulation and high OFF state current limiting its applications for logic and low power nanoelectronics. On the other hand, semiconducting transition metal dichalcoginides (TMDs) offer sizable band gaps with large ON/OFF current ratio (∼10 7 ) that is favorable for low power electronics and digital circuits.…”

Section: Resultsmentioning

confidence: 99%

Black Phosphorus Flexible Thin Film Transistors at Gighertz Frequencies

et al. 2016

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Black phosphorus (BP) has attracted rapidly growing attention for high speed and low power nanoelectronics owing to its compelling combination of tunable bandgap (0.3 to 2 eV) and high carrier mobility (up to ∼1000 cm(2)/V·s) at room temperature. In this work, we report the first radio frequency (RF) flexible top-gated (TG) BP thin-film transistors on highly bendable polyimide substrate for GHz nanoelectronic applications. Enhanced p-type charge transport with low-field mobility ∼233 cm(2)/V·s and current density of ∼100 μA/μm at VDS = -2 V were obtained from flexible BP transistor at a channel length L = 0.5 μm. Importantly, with optimized dielectric coating for air-stability during microfabrication, flexible BP RF transistors afforded intrinsic maximum oscillation frequency fMAX ∼ 14.5 GHz and unity current gain cutoff frequency fT ∼ 17.5 GHz at a channel length of 0.5 μm. Notably, the experimental fT achieved here is at least 45% higher than prior results on rigid substrate, which is attributed to the improved air-stability of fabricated BP devices. In addition, the high-frequency performance was investigated through mechanical bending test up to ∼1.5% tensile strain, which is ultimately limited by the inorganic dielectric film rather than the 2D material. Comparison of BP RF devices to other 2D semiconductors clearly indicates that BP offers the highest saturation velocity, an important metric for high-speed and RF flexible nanosystems.

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“…The oxygen deficiency can be easily controlled by the channel fabrication process conditions such as oxygen partial pressure during deposition/postannealing process, but these conventional techniques are difficult to selectively fabricate D-mode TFT next to E-mode device. To electively fabricate D-mode TFTs, several approaches have been proposed, including the control of channel compositions [31,35], the channel layer thickness control [25], local laser annealing [34], the use of different gate electrode materials, the formation of capping layer [33,40], low-k/high-k double gate oxide, top-gated structure, dual-gated structure [32] etc. Moreover, the fabrication of D-mode TFT by utilizing device degradation processes such as bias stress [30], light-irradiation [47], etc.…”

Section: Oxide-tft-based Nmos Invertermentioning

confidence: 99%

Recent progress of oxide-TFT-based inverter technology

Nomura

2021

Journal of Information Display

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Oxide semiconductor-based thin-film transistor (oxide-TFT) technology have gained significant attention since the innovation of n-channel oxide-TFT using ZnO and amorphous In-Ga-Zn-O (a-IGZO) channels because of their superior device properties including excellent electrical property such as high TFT mobility over > 10 cm 2 /Vs and the low-cost manufacturability originating from the low-temperature processability. Already, n-channel a-IGZO-TFT is widely employed as a TFT pixel switching backplane for several high-performance active-matrix flat-panel displays, and oxide-TFT technology to date is well acknowledged as the best TFT technology for future device applications in the wide range area of electronics such as sensors, Internet of things (IoT), energy-harvesting, medical/bio-interface device, etc. Therefore, the development of large-scale circuit beyond discrete TFT device level becomes increasingly important and is vital to advance the next stage of oxide-TFT technology. In particular, developing oxide-TFT-based inverter device technology is the key for developing several digital and analog circuits. In this paper, the recent progress and challenges in oxide-TFT-based inverter technology, including unipolar NMOS, PMOS, CMOS, and CMOS-like inverters using ambipolar oxide-TFT, are reviewed.

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Low-Voltage Double-Gate ZnO Thin-Film Transistor Circuits

Cited by 32 publications

References 19 publications

Flexible Black Phosphorus Ambipolar Transistors, Circuits and AM Demodulator

Flexible Black Phosphorus Ambipolar Transistors, Circuits and AM Demodulator

Black Phosphorus Flexible Thin Film Transistors at Gighertz Frequencies

Recent progress of oxide-TFT-based inverter technology

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