Low-voltage-driven a.c. thin film electroluminescent cell containing a ZnS:Mn film deposited by molecular beam epitaxy

Ohta, Shin‐ichi; Tadokoro, Toyoyasu; Satou, Shuji; Yokoyama, M.

doi:10.1016/0040-6090(88)90195-2

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1997

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Cited by 8 publications

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“…In the bulk form, ZnS has been grown by different evaporation or sublimation techniques, high-pressure growth from molten ZnS and hydrothermal techniques [3]. The vacuum technique is still the most popular method for thin film deposition of the material [5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Chemical bath deposition of ZnS thin films and modification by air annealing

Arenas

Nair

1997

Semicond. Sci. Technol.

100

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We demonstrate the deposition of ZnS thin films with a thickness of 0.04 to 0.45 µm at temperatures ranging from 25 to 80 • C from chemical baths comprising zinc sulphate, triethanolamine and thioacetamide at pH of about 10. The as-deposited films do not show crystallinity, are very resistive (conductivity 10 −9 −1 cm −1 ) and possess no photosensitivity. Annealing of the films in air at 450 to 500 • C for 1-2 h leads to partial conversion of the ZnS films to ZnO films. This is accompanied by an increase in the photoconductivity by more than six orders of magnitude. The optical bandgap is > 3.85 eV in the as-prepared films; after annealing in air the value drops to about 3.7 eV.

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