2010
DOI: 10.1109/led.2010.2047232
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Low-Voltage-Driven Flexible InGaZnO Thin-Film Transistor With Small Subthreshold Swing

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Cited by 59 publications
(31 citation statements)
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“…Finally, mechanically active multilayer substrates using a highly cross-linked hydrogel swelling layer and a stiff PI have been shown. Typical adhesion or buffer layers are made of silicon nitride (SiN x ), 92,106,113,114,140,[143][144][145][146]150,151,173,182,183 silicon oxide (SiO x ), 78,82,135,148,154,157,168,170,181,205 and photoresist sandwiched between SiN x and SiO x . 158 Organic materials, 78,82,136,148,154,157,168,170,181,205 in particular, SU8, 153 or PVP is especially well-suited as smoothing layers.…”
Section: Methodsmentioning
confidence: 99%
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“…Finally, mechanically active multilayer substrates using a highly cross-linked hydrogel swelling layer and a stiff PI have been shown. Typical adhesion or buffer layers are made of silicon nitride (SiN x ), 92,106,113,114,140,[143][144][145][146]150,151,173,182,183 silicon oxide (SiO x ), 78,82,135,148,154,157,168,170,181,205 and photoresist sandwiched between SiN x and SiO x . 158 Organic materials, 78,82,136,148,154,157,168,170,181,205 in particular, SU8, 153 or PVP is especially well-suited as smoothing layers.…”
Section: Methodsmentioning
confidence: 99%
“…158 The advantages of aluminum oxide are comparably high R around 9.5, low pinhole density if deposited by atomic layer deposition (ALD), and, especially in combination with IGZO, a good interface quality. Employed materials with a higher R include hafnium oxide (HfO 2 ), 177,180,181 hafnium lanthanum oxide (HfLaO), 170 titanium oxide (TiO 2 ), 154 and yttrium oxide (Y 2 O 3 ). 29,69 The drawback of these dielectrics is a scarcer availability, a worst interface quality, as well as a reduced compatibility with the TFT fabrication process.…”
Section: Methodsmentioning
confidence: 99%
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