Low Voltage Graphene FET Based Pressure Sensor

Abstract

This paper presents a low voltage graphene field effect transistor (GFET) based pressure sensor. The sensor comprises of GFET connected with a piezoelectric Aluminium Nitride (AlN) capacitor in an extended gate configuration. In this configuration, the piezopotential generated across the AlN capacitor, as a result of applied pressure, appears at the gate terminal of GFET and modulates the channel current. The sensor operates at a remarkably low voltage (100mV) and exhibits a sensitivity of about 7.18× 10-3 Pa-1 for a pressure range of 3.25-9.74 kPa. These values make the developed GFET sensor suitable for tactile skin in robotics and prosthetics and for wearable health monitoring devices.

Recent Advances in Silver Nanowire Based Flexible Capacitive Pressure Sensors: From Structure, Fabrication to Emerging Applications

“…[9,10] On the other hand, low power organic field-effect transistor (OFET) pressure sensors are extremely promising in the futuristic applications such as artificial skin and soft bioelectronics. [11][12][13] The capacitive pressure sensor market is forecasted to reach 4 billion USD by 2026 and has found several applications in various industries. [14] However, the entry of flexible capacitive pressure sensor to market is in its infancy stage.…”