Low-Voltage Operated Organic Thin-Film Transistors With Mobility Exceeding 10 cm²/vs

Li, Shizhang; Li, Dehui; Qi, Weihao; Xu, Mengyao; Wang, Wei

doi:10.1109/led.2021.3053935

Cited by 15 publications

(3 citation statements)

References 24 publications

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“…where k B is the Boltzmann constant, T is temperature, and q is the electron charge. Due to large hysteresis in transfer curve the N it density is one order larger as compared to literature values [12,35]. The calculated value is, N it = 3.1 × 10 13 cm −2 V −1 , also reported in the table 1.…”

Section: Thin Film Transistors: Hysteresis and Transient Measurementssupporting

confidence: 56%

“…In spite of the excellent device performance, the hysteresis in these CNT based TFT devices create large instability in threshold voltage (V Th ) which disturbed the switching characteristics and prevent their large scale industrial commercialization [6][7][8][9]. Traps presented at the dielectric-semiconductor interface or in the bulk of the dielectric were mainly claimed for the hysteresis and responsible for the bias-stress effect as well as shift in V Th [10][11][12][13]. In addition to charge carrier trapping, the immaturely cured or ambient air annealed PVP dielectric has large number of residual OH dipolar groups in the bulk and causes the slow polarization effect which in turn the reason for increase in drain-current and hysteresis in the transfer characteristics [14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

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Fully solution-processed carbon nanotubes thin film transistors and PMOS inverters on glass substrate

Singh

2023

Flex. Print. Electron.

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We report fully solution-processed thin film transistors (TFTs) and PMOS inverters fabricated on glass substrates using single-walled carbon nanotubes (SWCNTs) as active semiconducting material. All the electrodes (gate, source, and drain) were inkjet-printed using silver (Ag) as conductive ink. Spin coated poly-4-vinylphenol (PVP) dielectric was optimized in terms of thickness and heating conditions for solution-processed SWCNTs thin film transistors to achieve a mobility equal to 0.81 cm2/Vs. We will show that, hole traps at the dielectric-semiconductor interface are responsible for the hysteresis in the transfer curve, and controlled by the different sweep rate of the gate field. Drain-current transients under different bias conditions were studied and the increase in current due to slow polarizations of residual dipolar groups in the dielectric. The adopted technology has been exploited to fabricate a PMOS inverter and studied for high gain and noise margin values at the supply voltage, VDD = -40 V.

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Section: Thin Film Transistors: Hysteresis and Transient Measurementssupporting

confidence: 56%

Section: Introductionmentioning

confidence: 99%

Fully solution-processed carbon nanotubes thin film transistors and PMOS inverters on glass substrate

Singh

2023

Flex. Print. Electron.

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“…Therefore, the development of low-voltage and low-power brain-like hardware system is expected to break the von Neumann bottleneck. On the other hand, flexible organic field-effect transistor technology has been intensely investigated for smart artificial intelligence, , flexible sensors, , and flexible integrated circuits. , Therefore, development of flexible, low voltage, and low energy consumption brain-like computing systems driven by a tactile signal is a way to overcome the scaling and heating effect limited by ULSI. − However, most artificial intelligence synapses built with organic semiconductor (including polymer and small molecule) field effect transistors (OFETs) suffer from poor injection of the carrier and relatively high-power consumption (from nJ to pJ), − severely limiting the development and application of brain-like computing systems.…”

Section: Introductionmentioning

confidence: 99%

Artificial Tactile Recognition Enabled by Flexible Low-Voltage Organic Transistors and Low-Power Synaptic Electronics

Wang

Wei

et al. 2022

ACS Appl. Mater. Interfaces

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The advancement of self-powered intelligent strain systems for human−computer interaction is crucial toward wearable and energy-saving applications. Simultaneously, lowering operating voltage and thus reducing power consumption are of particular interests. A brain-like smart synaptic hardware system is considered as a promising candidate for low-power, parallel computing and learning processes. However, the combination of lowvoltage organic transistors and energy efficient smart synapse hardware systems driven by a tactile signal has been hindered by the limited materials and technology. Here, by employing an elastomeric copolymer poly-(vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) with a high HFP content of 25 mol %, flexible, low-voltage transistors (|V G | ≤ 3 V) and a low energy consumption synapse ≤ 9.2 × 10 −17 J are devised simultaneously, along with the lowest quality factor (R = P w × V G , 2.76 × 10 −16 J V). Furthermore, based on the low voltage and low power consumption characteristics, flexible artificial tactile recognition system and Morse code recognition are established without any computing supporting. Mechanical flexibility, cycling stability, image contrast enhancement functions, and simulated pattern recognition accuracy of the multilayer perceptron neural network are also simulated. This work recommends a route of exploiting low voltage, low power consumption synaptic systems and smart human−machine interfaces with low energy loss based on flexible organic synaptic transistors.

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Induction of Synaptic Plasticity in Flexible Organic Synaptic Transistors with Cross‐Linked Polymer Dielectric

Bhattacharjee,

Tiwari

2024

Adv Materials Technologies

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Controlled cross‐linking of polymer dielectric poly (4‐vinylphenol) (PVP) is demonstrated as an effective tool in enhancing the performance of flexible organic synaptic transistors (OSTs). Investigation of variation of concentration of the cross‐linking agent methylated poly (melamine‐co‐formaldehyde) (PMCF) in PVP in bilayer combination with high‐k hafnium oxide (HfO2) as gate dielectric in devices shows that the lower concentration of cross‐linking agent results in better memory performance. OSTs with 26% PMCF concentration in PVP (by mass) exhibit excellent memory performance with memory window > 4 V for VGS sweep of ±5 V, static retention of ≈104 s, dynamic retention for 500 cycles, and ≈125 continuous program/erase cycles. Pulse paired facilitation with relaxation time constants of 370 and 4670 ms respectively for slow and rapid phases with regulating modulation amplitude of ≈1 resemble a biological synapse. Through excitatory post synaptic current characteristics, spike timing dependant plasticity and spike voltage dependant plasticity are clearly observed, with low energy consumption per spike on the order of 10 pJ. Further, by leveraging the intricate interconnected data transfer and computation phenomenon, “AND” logic is effectively implemented using these OSTs. These exciting results may open up new directions toward the development of hardware for neuromorphic computing.

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Low-Voltage Operated Organic Thin-Film Transistors With Mobility Exceeding 10 cm²/vs

Cited by 15 publications

References 24 publications

Fully solution-processed carbon nanotubes thin film transistors and PMOS inverters on glass substrate

Fully solution-processed carbon nanotubes thin film transistors and PMOS inverters on glass substrate

Artificial Tactile Recognition Enabled by Flexible Low-Voltage Organic Transistors and Low-Power Synaptic Electronics

Induction of Synaptic Plasticity in Flexible Organic Synaptic Transistors with Cross‐Linked Polymer Dielectric

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