2008
DOI: 10.1002/pssc.200779209
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Low‐voltage‐operating fullerene C60 thin‐film transistors with various surface treatments

Abstract: Influence of surface treatment on fullerene C60 thin‐film transistors (TFTs) has been investigated. Phenyltrimethoxysilane (PTS), Hexamethyldisilazane (HMDS) and octadecyltrimethoxysilane (ODS) were used for the surface treatment. The treated surface was investigated by water‐contact‐angle measurement and the C60 deposited on the surface was observed with scanning electron microscope. As a result, C60 TFT with the ODS‐treated insulator exhibited the highest field‐effect mobility of 1.46 cm2/Vs. In addition, th… Show more

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Cited by 9 publications
(10 citation statements)
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(13 reference statements)
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“…Also, the change in parasitic resistance has been used for the control of threshold voltage. 30,31) Oxygen plasma 32) and UV ozone treatments [33][34][35] have conducted to obtain a hydrophilic surface as pre-treatment for gate dielectrics in organic TFTs. Such a treatment causes excess charges on or close to the surface of the gate dielectric.…”
Section: Introductionmentioning
confidence: 99%
“…Also, the change in parasitic resistance has been used for the control of threshold voltage. 30,31) Oxygen plasma 32) and UV ozone treatments [33][34][35] have conducted to obtain a hydrophilic surface as pre-treatment for gate dielectrics in organic TFTs. Such a treatment causes excess charges on or close to the surface of the gate dielectric.…”
Section: Introductionmentioning
confidence: 99%
“…Some groups have demonstrated threshold voltage control in organic TFTs on the basis of these phenomena. Oxygen plasma 28) and UV=ozone treatments [29][30][31] have been conducted to obtain a hydrophilic surface as pretreatment for gate dielectrics in organic TFTs. Such a treatment causes excess charges on or close to the surface of the gate dielectric.…”
Section: Introductionmentioning
confidence: 99%
“…Oxygen plasma 26) and UV ozone treatments 32,33) have been used to obtain a hydrophilic surface for formation of a SAM on a gate dielectric. Since the threshold voltage in organic TFTs depends on fixed charges on the surface of and inside the gate dielectric, oxygen plasma and UV ozone treatments of the surface of the gate dielectric possibly affect the threshold voltage.…”
Section: Introductionmentioning
confidence: 99%