Low-Voltage p-i-n GaN-Based Alpha-Particle Detector With High Energy Resolution

Hou, Qianyu; Cai, Qing; Yang, Qunsi; Shao, Pengfei; Pan, Danfeng; Chen, Dunjun; Lu, Hai; Zhang, Rong; Zheng, Youdou

doi:10.1109/led.2021.3124919

Cited by 6 publications

(4 citation statements)

References 27 publications

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“…α Particle detection was also demonstrated using detectors based on p–n and p–i–n junctions. − Recently, Hou et al fabricated a detector by growing a GaN p–i–n structure on top of a 350 μm thick GaN substrate. When considering solely the energy deposited in the depletion region of the detector, they measured a CCE of 92% when applying a reverse bias of 50 V. When operating the detector in self-powered mode, the CCE decreased to 31% . These values were improved by Geng et al, who used an isoelectronic Al doping step on the intrinsic GaN layer in order to improve its crystalline quality.…”

Section: Introductionmentioning

confidence: 99%

“…When considering solely the energy deposited in the depletion region of the detector, they measured a CCE of 92% when applying a reverse bias of 50 V. When operating the detector in selfpowered mode, the CCE decreased to 31%. 17 These values were improved by Geng et al, who used an isoelectronic Al doping step on the intrinsic GaN layer in order to improve its crystalline quality. The detector they fabricated using the Aldoped intrinsic layer presented a 100% CCE, with very good energy resolution when applying a reverse bias of 50 V, although this value dropped to 80% CCE when applying no bias to the detector.…”

Section: ■ Introductionmentioning

confidence: 99%

“…CCE values above 90% were achieved; however, high voltages were required to reach these CCE magnitudes. , By fabricating a Schottky barrier diode based on a thin GaN layer grown epitaxially on freestanding GaN with a low threading dislocation density, Sandupatla et al were able to achieve good CCE values at lower voltages, more specifically, a CCE above 60% was obtained when applying a reverse bias of 20 V . α Particle detection was also demonstrated using detectors based on p–n and p–i–n junctions. − Recently, Hou et al fabricated a detector by growing a GaN p–i–n structure on top of a 350 μm thick GaN substrate. When considering solely the energy deposited in the depletion region of the detector, they measured a CCE of 92% when applying a reverse bias of 50 V. When operating the detector in self-powered mode, the CCE decreased to 31% .…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Charge Collection Efficiency of Single GaN Core–Shell Wires Assessed by High-Precision Ion-Beam-Induced Charge Measurements

Verheij,

Vićentijević,

Jakšić

et al. 2024

ACS Appl. Electron. Mater.

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We report on the charge collection efficiency (CCE) of GaN core−shell p−n junction microwires obtained through high-precision ion-beam-induced charge (IBIC) measurements. Single wires are processed into working radiation detectors using a set of microfabrication processes and are irradiated with either 1 MeV or 750 keV Si ions. We show that we are able to accurately probe the microwires and measure structures that have dimensions below 1 μm. CCE maps show that the detectors are efficient in collecting the charge induced by the Si ions, presenting average CCE magnitudes between 20 and 30% when applying a small reverse bias. Additionally, three-dimensional Monte Carlo simulations were carried out to gain a better understanding of the energy deposition in the depletion region of the p−n junction. Comparison between the experimental and simulated data shows good agreement despite also revealing some drawbacks associated with the microwire detectors, namely, the poor collection efficiency of charge carriers generated in the neutral n-GaN core. Nevertheless, the average CCE of the detectors is promising, especially when only considering the energy deposited in the active region of the detector. In this case, depending on the applied bias, we obtain a CCE between 45 and 80%.

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Section: Introductionmentioning

confidence: 99%

Section: ■ Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Charge Collection Efficiency of Single GaN Core–Shell Wires Assessed by High-Precision Ion-Beam-Induced Charge Measurements

Verheij,

Vićentijević,

Jakšić

et al. 2024

ACS Appl. Electron. Mater.

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show abstract

“…Compared to SiC PIN and junction barrier Schottky (JBS) detectors [11][12][13], the SiC Schottky barrier detectors (SBDs) have fast switching speeds and well-established manufacturing processes. These make it extensive application in environments characterized by high temperatures, high frequencies, and low power consumption [14][15][16].…”

Section: Introductionmentioning

confidence: 99%

Transient behaviour analysis in silicon carbide alpha particle detector using TCAD and SRIM simulation

He,

Cao,

et al. 2024

Phys. Scr.

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Time response characteristics of α particle detector is crucial for monitoring radiation fields varied with time and its characterization of pulse radiation field. Here, SRIM-informed TCAD simulation is utilized to visually investigate the transient behaviors of carrier and alpha particles in 4H-SiC Schottky barrier detectors for the time response characteristics. We identified external bias voltage and incident particle energy as key factors to influence transient current pulse broadening. Low-energy alpha particles result in low initial kinetic energy of the ionization-generated carriers, leading to transient current broadening and reduced time resolution characteristics. Conversely, high-energy alpha particles ionize carrier with high drift velocity, preventing the broadening effect. Our simulation provides a planform and valuable guidance for optimizing alpha particle detector, selecting appropriate bias voltages, and enhancing time resolution capabilities.

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Effect of reverse voltage on alpha spectra of pre-conditioned Si PIN diodes deployed in vacuum/ambient environment

Karrevula,

Prabakar,

Raghu Ramaiah

et al. 2023

Nuclear Instruments and Methods in Physics Research Section A:

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Low-Voltage p-i-n GaN-Based Alpha-Particle Detector With High Energy Resolution

Cited by 6 publications

References 27 publications

Charge Collection Efficiency of Single GaN Core–Shell Wires Assessed by High-Precision Ion-Beam-Induced Charge Measurements

Charge Collection Efficiency of Single GaN Core–Shell Wires Assessed by High-Precision Ion-Beam-Induced Charge Measurements

Transient behaviour analysis in silicon carbide alpha particle detector using TCAD and SRIM simulation

Effect of reverse voltage on alpha spectra of pre-conditioned Si PIN diodes deployed in vacuum/ambient environment

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