Low voltage pentacene thin film transistors employing a self-grown metal-oxide as a gate dielectric

Silk Fibroin for Flexible Electronic Devices

“…[133][134][135] Therefore, a wide range of materials have been explored as the gate dielectric to improve the mobility for organic thin-fi lm transistors (OTFTs), such as inorganic metal oxides, polymers, and molecules derived from biomaterials. [ 22,29,70,136,137 ] In particular, silk fi broin has come into the picture as a dielectric material for OFETs because of its excellent dielectric properties, mechanical fl exibility, and processability. Moreover, silk-fi broin fi lms can improve the crystallization of organic semiconductors compared with inorganic gate dielectrics.…”

Flexible Oxide-Based Thin-Film Transistors on Plastic Substrates for Logic Applications

“…Oxide-based TFTs are regarded as the potential candidates for highperformance flexible TFTs because of their high performance even processed at low temperature [5,6] . In order to realize flexible TFTs of high performances with low-voltage operation, the conventional approaches are to decrease the thickness of dielectric films or to use high relative permittivity (high-k) gate dielectric [7,8] . At the same time, a fascinating and prospective route is using polymer electrolytes or ion liquid as gate dielectrics, which can realize much stronger gate capacitive coupling effects and a low-voltage operation of below 1.5 V [9,10] .…”

Dry growth of n-octylphosphonic acid monolayer for low-voltage organic thin-film transistors

“…OTFTs with moderate-k value dielectrics such as aluminium oxide (k ~ 6.2) [13,14] have achieved low operating voltages through reduction in thickness [15]. However, very thin aluminium oxide layers exhibit high leakage currents, e.g.…”

“…However, very thin aluminium oxide layers exhibit high leakage currents, e.g. > 10 -6 A/cm 2 at 2 V [15]. Hence, these ultra-thin dielectrics have their limitations in OTFTs.…”