Low-voltage SnO2 nanowire transistors gated by solution-processed chitosan-based proton conductors

Abstract

Recently, a bioprotonic field-effect transistor with chitosan nanowire channel was demonstrated [Nat. Commun., 2011, 2, 476]. Here, it is interesting to find that solution-processed chitosan films with a large electric-double-layer (EDL) specific capacitance can also be used as the gate dielectrics for low-voltage individual SnO(2) nanowire transistors. The field-effect electron mobility, current on/off ratio and sub-threshold slope of such a hybrid SnO(2) nanowire device is estimated to be 128 cm(2) V(-1) s(-1), 2.3 × 10(4) and 90 mV per decade, respectively. Such low-voltage nanowire EDL transistors gated by chitosan-based proton conductors are promising for nanosensors and bioelectronics.

A Dual‐Organic‐Transistor‐Based Tactile‐Perception System with Signal‐Processing Functionality

“…In addition, transistors can provide an effective platform for the construction of artificial synapses since the channel conductivity of a transistor can be modulated by the gate electrode to emulate the synaptic functions . Up to now, several floating gate silicon transistors, nanoparticle organic transistors, carbon nanotube/graphene transistors, in‐plane‐gate inorganic transistors, and organic electrochemical transistors have been designed as artificial synapses with prominent biomimetic functions . Despite these achievements, novel intelligent elements with integrated sensing and a single processing functionality are extremely difficult to achieve.…”

“…PDPP3T was spin‐coated onto the substrate as the organic active layer (Figure ). Chitosan (Figure ), a proton‐conducting material, was utilized to sever as dielectric material in the synaptic transistors. An aluminum (Al) electrode was deposited on the dielectric layer as the gate electrode.…”

“…This expected phenomenon confirmed the STP of the integrated DOT‐TPE array. The enhancement of the I post observed with strengthened and repeated stimulus cycles is relevant to the learning and memory process of human beings …”

Synthesis of SnO2 Nanowires Using SnI2 as Precursor and Their Application as High‐Performance Self‐Powered Ultraviolet Photodetectors

“…In general, tin particles or SnO 2 /C mixed powders are selected as precursor for the synthesis of SnO 2 nanowires . Alternatively, we have used elemental tin as a precursor in our study and have investigated the effect of the growth parameters and Au layer thickness on the synthesized nanostructures.…”

“…In general, tin particles or SnO 2 /C mixed powders are selected as precursor for the synthesis of SnO 2 nanowires. [22][23][24][25] Alternatively, we have used elemental tin as a precursor in our study and have investigated the effect of the growth parameters and Au layer thickness on the synthesized nanostructures. The amount and the ratio of tin and oxygen precursors are expected to be the most important parameters for the synthesis of the SnO 2 nanowires.…”