2019 International Conference on Clean Electrical Power (ICCEP) 2019
DOI: 10.1109/iccep.2019.8890217
|View full text |Cite
|
Sign up to set email alerts
|

Low Voltage Trench-Gate MOSFETs for High Efficiency Auxiliary Power Supply Applications

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

0
8
0

Year Published

2021
2021
2024
2024

Publication Types

Select...
4
4

Relationship

0
8

Authors

Journals

citations
Cited by 20 publications
(8 citation statements)
references
References 9 publications
0
8
0
Order By: Relevance
“…Achieving this significantly low output voltage value necessitates the use of switching devices with minimal voltage drops. The switching circuit can be implemented with MOS-FETs characterized by low current and low breakdown voltage, operating in a synchronous buck converter configuration [31]. However, to reduce the current ripple, a high switching frequency of the buck converter would be beneficial.…”
Section: Analysis Of the Magnetizing Current Regulationmentioning
confidence: 99%
“…Achieving this significantly low output voltage value necessitates the use of switching devices with minimal voltage drops. The switching circuit can be implemented with MOS-FETs characterized by low current and low breakdown voltage, operating in a synchronous buck converter configuration [31]. However, to reduce the current ripple, a high switching frequency of the buck converter would be beneficial.…”
Section: Analysis Of the Magnetizing Current Regulationmentioning
confidence: 99%
“…Despite the small Q G of the chosen MOSFET, the FOM is very favorable to the GaN FET device, as shown in the graph of Figure 9a, related to the results in Table 1. The output capacitor C oss is a parameter related to the switching losses [21,40]. The MOSFET shows a higher C oss than the GaN FET.…”
Section: Gan For Dc-dc Power Convertersmentioning
confidence: 99%
“…An input voltage V i = 3.3 V is chosen to avoid the operation with an extremely low duty cycle. The switching circuit can be realised using low current and low breakdown voltage MOSFETs operating in synchronous stepdown converter topology [30]. A lower current ripple and a higher precise regulation can be achieved by increasing the switching frequency, as represented in Fig.…”
Section: DC Current Regulatorsmentioning
confidence: 99%