Low-Voltage Zn[sub 0.97]Zr[sub 0.03]O Thin-Film Transistors Incorporating High-k (Ba,Sr)TiO[sub 3] Gate Insulators Deposited on BaRuO[sub 3](110) Gate Electrodes

Lee, Jen Hao; Lin, Pang; Ho, Jia Chong; Lee, Cheng Chung

doi:10.1149/1.2217133

Cited by 2 publications

(1 citation statement)

References 19 publications

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“…8) Many studies on BRO thin films grown on the single-crystal substrates such as SrTiO3 (STO), 9)-12) LaAlO3 (LAO) 13) and Si 14), 15) have been conducted; however, study on the morphology and electrical properties of thin films epitaxially grown on a slightly mismatched substrate would help to clarify the mechanism of epitaxial growth. Moreover, since MgO (Fm3 -m: a = 0.422 nm) is an inexpensive and accessible material, it would be a favorable substrate for practical usage.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial growth of BaRuO<sub>3</sub> thin films on MgO substrates by laser ablation

Ito

Masumoto

Goto

et al. 2009

J. Ceram. Soc. Japan

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Epitaxial BaRuO3 (BRO) thin films were prepared on (001) and (111) MgO substrates by laser ablation, and the relationship of lattice matching, morphology and electrical conductivity was investigated. (205)-and (001)-oriented rhombohedral BRO thin films were epitaxially grown on (001) and (111) MgO substrates, respectively. The (205) BRO thin films showed an orthogonal texture with faceted island grains, whereas the (001) BRO thin films had a hexagonal columnar structure with a flat terrace. Epitaxial BRO thin films showed metallic conduction, and the (205) BRO thin films exhibited the highest electrical conductivity, i.e., 1.0 × 10 5 S·m -1 , at room temperature. A higher lattice matching between epitaxial thin film and the substrate yielded a higher electrical conductivity.

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Section: Introductionmentioning

confidence: 99%

Epitaxial growth of BaRuO<sub>3</sub> thin films on MgO substrates by laser ablation

Ito

Masumoto

Goto

et al. 2009

J. Ceram. Soc. Japan

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Low-Voltage Depletion-Mode Indium-Tin-Oxide Thin-Film Transistors Gated by Ba _0.4 Sr _0.6 TiO ₃ Dielectric

Wang

Dou

et al. 2010

Chinese Phys. Lett.

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We report on the fabrication and characterization of low-voltage indium-tin-oxide (ITO) thin-film transistors (TFTs) gated by Ba0.4Sr0.6TiO3 (BST) gate dielectric deposited at room temperature. The 400-nm-thick BST film shows a low leakage current density of 6 × 10 −8 A/cm 2 and a high specific capacitance of 83 nF/cm 2 (corresponding 𝜀𝑟 = 37). The ITO TFTs gated by such BST dielectric operate in a depletion mode with an operation voltage of 5.0 V. The device exhibits a threshold voltage of −3.7 V, a subthreshold swing of 0.5 V/decade, a field effect mobility of 3.2 cm 2 /Vs and a current on/off ratio of 1.4 × 10 4 .

show abstract

Low-Voltage Zn[sub 0.97]Zr[sub 0.03]O Thin-Film Transistors Incorporating High-k (Ba,Sr)TiO[sub 3] Gate Insulators Deposited on BaRuO[sub 3](110) Gate Electrodes

Cited by 2 publications

References 19 publications

Epitaxial growth of BaRuO<sub>3</sub> thin films on MgO substrates by laser ablation

Epitaxial growth of BaRuO<sub>3</sub> thin films on MgO substrates by laser ablation

Low-Voltage Depletion-Mode Indium-Tin-Oxide Thin-Film Transistors Gated by Ba _0.4 Sr _0.6 TiO ₃ Dielectric

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Low-Voltage Zn[sub 0.97]Zr[sub 0.03]O Thin-Film Transistors Incorporating High-k (Ba,Sr)TiO[sub 3] Gate Insulators Deposited on BaRuO[sub 3](110) Gate Electrodes

Cited by 2 publications

References 19 publications

Epitaxial growth of BaRuO<sub>3</sub> thin films on MgO substrates by laser ablation

Epitaxial growth of BaRuO<sub>3</sub> thin films on MgO substrates by laser ablation

Low-Voltage Depletion-Mode Indium-Tin-Oxide Thin-Film Transistors Gated by Ba 0.4 Sr 0.6 TiO 3 Dielectric

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Low-Voltage Depletion-Mode Indium-Tin-Oxide Thin-Film Transistors Gated by Ba _0.4 Sr _0.6 TiO ₃ Dielectric