2009 4th International Design and Test Workshop (IDT) 2009
DOI: 10.1109/idt.2009.5404147
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Lower power, lower delay design scheme for CMOS tapered buffers

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Cited by 1 publication
(2 citation statements)
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“…It is observed that increasing the threshold voltage between 0.2 V DD and 0.4 V DD gives the highest reduction in power with a minimal penalty in delay. Thereafter, the propagation delay increases quickly as V th is increased beyond 0.4 V DD and a high penalty in terms of speed has to be paid [4]. It is necessary to mention here that there is another incentive in not allowing the threshold voltage to increase beyond 0.4 V DD which is that the threshold voltage value should be less than the switching threshold V M = (0.5V DD ).…”
Section: Power and Delay Optimizationmentioning
confidence: 99%
See 1 more Smart Citation
“…It is observed that increasing the threshold voltage between 0.2 V DD and 0.4 V DD gives the highest reduction in power with a minimal penalty in delay. Thereafter, the propagation delay increases quickly as V th is increased beyond 0.4 V DD and a high penalty in terms of speed has to be paid [4]. It is necessary to mention here that there is another incentive in not allowing the threshold voltage to increase beyond 0.4 V DD which is that the threshold voltage value should be less than the switching threshold V M = (0.5V DD ).…”
Section: Power and Delay Optimizationmentioning
confidence: 99%
“…while working in nano scale technology the total power dissipation of clock drivers, which generally have CMOS inverters, is quite large and have 30 to 50% share only of leakage current and short circuit current [1,2]. To solve this problem of high power dissipation, a design scheme has been proposed, which not only minimizes short circuit power, and leakage power but also optimizes propagation delay [3,4]. So our work presents a CMOS taper buffer design which considers the power dissipation as dominant cost function.…”
Section: Introductionmentioning
confidence: 99%