Lower‐Voltage Electroluminescence of Green Zinc Silicate on SiO_x Interface in Metal–Oxide–Semiconductor Structure

Abstract

A Zn 2 SiO 4 :Mn 2þ -based metal-oxide-semiconductor electroluminescence (MOS EL) device on silicon wafer is demonstrated through a facile one-step annealing process. The MOS EL device consists of two sublayers: 200 nm thick single-phase crystalline Zn 2 SiO 4 :Mn 2þ for an emitting layer and 160 nm thick amorphous SiO x for interfacial layer as a carrier-injecting-accelerating layer on a silicon wafer. It exhibits blueshift of the green EL peak with spectral broadening. According to applied polarities, it shows asymmetric electrical and optical properties. Eminently, it exhibits the best luminous efficiency of 1.2 lm W À1 at a comparatively lower threshold voltage (50 V op corresponding to the electric field of 1.1 MV cm À1 ) and high reliability (>600 min at 70 V op ).