2002
DOI: 10.1063/1.1469697
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Lowering of operational voltage of organic electroluminescent devices by coating indium-tin-oxide electrodes with a thin CuOx layer

Abstract: We devised a method of modifying indium-tin-oxide (ITO) electrodes for organic electroluminescent devices. It consists of deposition of a nanometer-thick Cu layer on the ITO electrode and an oxygen plasma treatment. By this modification, the surface of the ITO substrate is covered with a partly oxidized Cu layer (CuOx). The CuOx-coated ITO electrode possesses strong hole-injection ability, which leads to lowered operational voltage and high luminance from the devices consisting of tris(8-quinolinato)aluminum a… Show more

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Cited by 69 publications
(50 citation statements)
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References 15 publications
(12 reference statements)
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“…It has previously been postulated that the formation of Cu x O improves hole injection in FETs. [24] The small amount of O 2 adsorbed onto the organic layer is likely responsible for the formation of Cu x O. Cu 2 O has been widely studied as an inorganic semiconductor with a bandgap of 2.17 eV and an electron affinity of 3.2 eV, [25] which imply a valance band position of around 5.37 eV. The valance band position of Cu 2 O is aligned with the highest occupied molecular orbital of pentacene and tetracene, resulting in a dramatic reduction of the hole-injection barrier.…”
mentioning
confidence: 97%
“…It has previously been postulated that the formation of Cu x O improves hole injection in FETs. [24] The small amount of O 2 adsorbed onto the organic layer is likely responsible for the formation of Cu x O. Cu 2 O has been widely studied as an inorganic semiconductor with a bandgap of 2.17 eV and an electron affinity of 3.2 eV, [25] which imply a valance band position of around 5.37 eV. The valance band position of Cu 2 O is aligned with the highest occupied molecular orbital of pentacene and tetracene, resulting in a dramatic reduction of the hole-injection barrier.…”
mentioning
confidence: 97%
“…Even further immersing the wire into 0.01 mol/L HCl acid for another 10 min, no obvious change was found. Such oxidation of metals by oxygen plasma has been described elsewhere [13][14][15][16] . Our results of surface X-ray photoelectron spectroscopy confirmed this oxidation because obvious satellite peaks at ~860 and ~880 eV (fingerprints of NiO) emerged after oxygen plasma treatment.…”
Section: Physical Chemistrymentioning
confidence: 99%
“…[9] Several groups have reported results based on methods that modify the electrodes and improve injection properties. [9][10][11][12][13][14][15][16] Indium tin oxide (ITO) has been the preferred anode for all organic optoelectronic devices, owing to its optical transparency. However, the work function of ITO is quite low (even after processing methods including special ITO treatments such as plasma or oxygen treatment).…”
Section: Introductionmentioning
confidence: 99%
“…One method of increasing the work function of ITO is to include additional engineering at the ITO/organic interface using high-work-function metal oxides or self-assembled monolayers between the ITO and organic material to increase the hole-injection efficiencies. [10][11][12][13] The most common way to improve hole injection/extraction is to incorporate a hole-transporting layer (buffer layer) such as poly (3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT: PSS) on top of the ITO surface. [14,15] One of the main features of the buffer layer is that it increases the hole injection from the ITO to the organic layer by increasing the work function of the anode.…”
Section: Introductionmentioning
confidence: 99%