Lowering the Schottky Barrier Height by Titanium Contact for High-Drain Current in Mono-layer MoS2 Transistor

Sridevi, R.; Pravin, J. Charles; Babu, A. Ramesh; Ajayan, J.

doi:10.1007/s11664-021-08811-0

Cited by 9 publications

(3 citation statements)

References 32 publications

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“…The saturation current under a reverse bias is larger than that under a forward bias. It is suspected the asymmetric I – V characteristics are caused by the difference of the Schottky barrier heights of the two interfaces. , In addition, the simulation curves show several points being shifted to weakly positive values in voltage. It is suspected that the positive shifts resulted from the transport mechanisms of carriers at interfaces .…”

Section: Discussionmentioning

confidence: 98%

Mechanism and Equivalent Circuit Model of Multielement Metal-Oxide Thin-Film Photodetectors

Liu

Chung

et al. 2021

ACS Appl. Electron. Mater.

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In this paper, photodetector devices with a trilayer structure of p+-Si-substrate (p+-Si)/multielement metal-oxide thin film (MO)/indium tin oxide thin film (ITO) were built, and the associated possible mechanism was discussed. An equivalent circuit model for trilayer photodetectors based on the band structure and I–V characteristic was developed. The I–V characteristics and the equivalent circuit model of the photodetector based on the energy band structure were verified via HSPICE simulation and were investigated comprehensively. The accuracy of the simulation results was greater than 99%. This work paves the way for understanding the working mechanism as well as the potential application for optimizing device fabrication for multielement photodetectors.

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Section: Discussionmentioning

confidence: 98%

Mechanism and Equivalent Circuit Model of Multielement Metal-Oxide Thin-Film Photodetectors

Liu

Chung

et al. 2021

ACS Appl. Electron. Mater.

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“…As mentioned earlier, the authors have employed COMSOL Multiphysics to study the transfer characteristics for devices with a channel length ≥15 nm. On the other hand, previous work reveals that the near ballistic transport due to tunnelling plays a vital role in devices with channel length <15 nm [ 30 , 31 , 32 ]. Therefore, the quantum transport model is invoked and is modelled using MATLAB.…”

Section: Computational Modeling and Methodologymentioning

confidence: 99%

Effects of Channel Length Scaling on the Electrical Characteristics of Multilayer MoS2 Field Effect Transistor

et al. 2023

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With the rapid miniaturization of integrated chips in recent decades, aggressive geometric scaling of transistor dimensions to nanometric scales has become imperative. Recent works have reported the usefulness of 2D transition metal dichalcogenides (TMDs) like MoS2 in MOSFET fabrication due to their enhanced active surface area, thin body, and non-zero bandgap. However, a systematic study on the effects of geometric scaling down to sub-10-nm nodes on the performance of MoS2 MOSFETs is lacking. Here, the authors present an extensive study on the performance of MoS2 FETs when geometrically scaled down to the sub-10 nm range. Transport properties are modelled using drift-diffusion equations in the classical regime and self-consistent Schrödinger-Poisson solution using NEGF formulation in the quantum regime. By employing the device modeling tool COMSOL for the classical regime, drain current vs. gate voltage (ID vs. VGS) plots were simulated. On the other hand, NEGF formulation for quantum regions is performed using MATLAB, and transfer characteristics are obtained. The effects of scaling device dimensions, such as channel length and contact length, are evaluated based on transfer characteristics by computing performance metrics like drain-induced barrier lowering (DIBL), on-off currents, subthreshold swing, and threshold voltage.

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“…The high contact resistance becomes a bottleneck for the application of 2D materials to FETs. To date, numerous efforts have been made to address this problem, such as the following: decreasing the Schottky barrier height of the metal/semiconductor junction with suitable work function metals; − achieving Fermi-level pinning through inserting an insulating tunneling layer between the metal and the semiconductor; , designing contact geometry; − phasing engineering a 2D semiconductor into a metallic phase; , and molecular and electrolyte doping of the channel. , Consider the most extensively researched material, MoS 2 , as an example. Leong et al reported that the contact resistance of MoS 2 /nickel-etched-graphene can be reduced to 200 Ω·μm .…”

Section: Introductionmentioning

confidence: 99%

Anisotropic Low Schottky Barrier and Transport Properties of the Co-Intercalated Bilayer SnS₂/Monolayer SnS₂ Junction from First Principles

Liu

Tao

Zhang

et al. 2023

ACS Appl. Electron. Mater.

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The high contact resistance at metal/two-dimensional (2D) semiconductor junctions is a major issue in nanoelectronic devices. In this work, we proposed and theoretically investigated the transport properties of a SnS 2 -based field-effect transistor in which a monolayer SnS 2 semiconductor is connected to metallic Co-intercalated bilayer SnS 2 (Co−SnS 2 ) electrodes. The Co−SnS 2 /SnS 2 junction has a low Schottky barrier height of 0.22 eV in the armchair direction and 0.14 eV in the zigzag direction. Because there are more transport channels in the zigzag direction than in the armchair direction, the former has a higher transmission coefficient than the latter. The Schottky contact can be transformed into an ohmic contact after the bias voltage is greater than 0.3 V for armchair direction and 0.2 V for zigzag direction, as the bottom of the conduction band provides the transport channel. The device also has low contact resistance, which is close to the theoretical limit at 0.6 V bias.

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Lowering the Schottky Barrier Height by Titanium Contact for High-Drain Current in Mono-layer MoS2 Transistor

Cited by 9 publications

References 32 publications

Mechanism and Equivalent Circuit Model of Multielement Metal-Oxide Thin-Film Photodetectors

Mechanism and Equivalent Circuit Model of Multielement Metal-Oxide Thin-Film Photodetectors

Effects of Channel Length Scaling on the Electrical Characteristics of Multilayer MoS2 Field Effect Transistor

Anisotropic Low Schottky Barrier and Transport Properties of the Co-Intercalated Bilayer SnS₂/Monolayer SnS₂ Junction from First Principles

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Lowering the Schottky Barrier Height by Titanium Contact for High-Drain Current in Mono-layer MoS2 Transistor

Cited by 9 publications

References 32 publications

Mechanism and Equivalent Circuit Model of Multielement Metal-Oxide Thin-Film Photodetectors

Mechanism and Equivalent Circuit Model of Multielement Metal-Oxide Thin-Film Photodetectors

Effects of Channel Length Scaling on the Electrical Characteristics of Multilayer MoS2 Field Effect Transistor

Anisotropic Low Schottky Barrier and Transport Properties of the Co-Intercalated Bilayer SnS2/Monolayer SnS2 Junction from First Principles

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Product

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Anisotropic Low Schottky Barrier and Transport Properties of the Co-Intercalated Bilayer SnS₂/Monolayer SnS₂ Junction from First Principles