LP MOVPE growth and characterization of high Al content AlxGa1−xN epilayers

Thermodynamic study of AlGaN composition grown by metalorganic chemical vapor deposition

“…However, in our experiment, Al composition in AlGaN showed significant positive deviation from the linear relationship with the gas phase ratio, as shown in Fig. 1, where previous results from other groups were included for comparison [6][7][8][9][10][11]. In this work, we report the origin of such compositional deviation in terms of a thermodynamic model.…”

Effect of growth temperature of initial AlN buffer on the structural and optical properties of Al-rich AlGaN

“…Therefore, there still exists an extensive room for us to further reduce TDs. where E g (GaN) ¼ 3.4 eV, E g (AlN) ¼ 6.2 eV [1], the experimental band gap bowing parameter b is 0.7597770.06085 eV and Al compositions (x) are estimated by XRD results in Fig. 1.…”

“…Recently, AlGaN materials have attracted much interest in the fields of ultraviolet (UV) photodetectors, especially solar-blind photodetectors [1][2][3][4] as well as high-brightness UV light-emitting diodes (LEDs) [5,6]. In most of cases, GaN or Ga-rich AlGaN epilayer has typically been used as an underlying buffer for Al-rich AlGaN.…”

Reducing dislocations of Al-rich AlGaN by combining AlN buffer and AlN/Al0.8Ga0.2N superlattices

“…Due to their wide and direct band gap energy between 3.4 eV (GaN) and 6.2 eV (AlN) [1], Al x Ga 1Àx N alloys are promising materials for applications in deep ultraviolet (UV) devices, such as UV photodetectors [2,3], especially solar-blind photodetectors [4] as well as UV light-emission diodes (LEDs) with peak emission wavelengths from 250 to 340 nm [5][6][7][8]. However, techniques for fabricating highquality Al-rich AlGaN films are not mature up to now, due to lack of lattice and thermal matched substrates and inherent Al chemical activity.…”