Thermodynamic study of AlGaN composition grown by metalorganic chemical vapor deposition

Song, Duheon; Kim, Hee Jin; Jeon, Yong Seon; Yoon, Euijoon

doi:10.1016/j.jcrysgro.2006.10.162

Cited by 4 publications

(1 citation statement)

References 13 publications

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“…Figure 7 demonstrates the experimental results of the relationship between Al component and TMAl/III in AlGaN layers, indicating that the relationship between them was relatively large in different growth environments. 51,53,[57][58][59][60][61][62]45,46,63 In the experiments of Song et al, 61 Ubukata et al 46 and Miyoshi et al, 51 the Al component in the AlGaN layer was larger than the TMAl/III at the inlet, and the parasitic reaction was suppressed. While, in the experiments of Mihopoulos et al 59 and Lobanova et al, 60 the Al component was smaller, and the parasitic reaction was strong.…”

Section: Experiments and Mechanism Research Of Algan Growthmentioning

confidence: 96%

Review—Review of Research on AlGaN MOCVD Growth

Tang

Zhang

et al. 2020

ECS J. Solid State Sci. Technol.

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Due to the broad application prospects of optoelectronic devices and microwave devices at high temperature and power, the process of Metal Organic Chemical Vapor Deposition (MOCVD) of AlGaN of the key material AlGaN has been extensively researched in the past 30 years. In order to enhance the quality of AlGaN layers, researchers continuously analyzed their growth mechanism and optimized the growth process through experimental and theoretical studies. In this work, based on reviewing previous studies, we summarize the research progress for AlGaN grown by MOCVD and discuss the existing problems and future research priorities.

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