LPE growth and optical characteristics of GaAs 1− x Sb x epilayer

Hu, Shuhong; Zhou, Wei; Sun, Yan; Zhang, Bin; Wang, Chao; Dai, Ning

doi:10.1016/j.jcrysgro.2017.01.040

Cited by 8 publications

(5 citation statements)

References 26 publications

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“…In addition, the adsorption capacities of ethane and propane of Cu‐BTC are much higher than that of conventional adsorption materials such as activated carbon, silica gel and molecular sieve (Figure 5, Figure S1–S3), and higher than many reported values of MOFs in the literature (Table 1). [16–21] …”

Section: Resultsmentioning

confidence: 99%

“…The large specific surface area of MOFs renders excellent adsorption properties, and impressively their good structural designability can achieve highly selective adsorption of specific types of gases [13–15] . Thus far, several researches have demonstrated that MOFs have good adsorption capacity of light hydrocarbons [16–20] . However, most of these reported MOFs are not suitable for the industrial application of light hydrocarbon adsorption due to the limitations such as harsh reaction conditions, use of environmentally unfriendly organic solvents, complex ligand synthesis route and difficulty to scale up production.…”

Section: Introductionmentioning

confidence: 99%

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Rapid Scale‐up Room‐temperature Synthesis of Cu‐BTC and Its Adsorption Properties for Light Hydrocarbons

Li,

Zhang

et al. 2023

ChemistrySelect

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Light hydrocarbon (C2~C3) adsorption treatment in order to achieve exhaust emission standards of volatile organic compounds (VOCs) is very important and urgent in oil refining and oil storage enterprises. As an important adsorbent, metal‐organic frameworks (MOFs) with large specific surface area and good designability show excellent adsorption properties for light hydrocarbon. In this paper, by replacing the nitrate commonly used in the synthesis of MOFs with alkali metal, and adding a certain proportion of competing carboxylic acid into the reaction system, Cu‐BTC with improved pore structure and adsorption performance of light hydrocarbon was prepared at room temperature. More impressively, 10 L and 100 L scale‐up synthesis of Cu‐BTC were carried out by this method, which remained high light hydrocarbon adsorption capacities, showing great application prospect in the field of VOCs treatment.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Rapid Scale‐up Room‐temperature Synthesis of Cu‐BTC and Its Adsorption Properties for Light Hydrocarbons

Li,

Zhang

et al. 2023

ChemistrySelect

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“…Начальные составы ростового расплава (x0, y0) принимались соответствующими изотерме ликвидуса T0 = 1500 К и нескольким различным значениям z0 = 0.2; 0,4; 0,6; 0,7; 0,72; 0,74; 0,76; 0,78; 0,8; 0,82; 0,84; 0,86; 0,88; 0,9. Результаты численного решения уравнения (11) Состав жидкой фазы на инверсной кривой определяется с помощью (7), (8):…”

Section: мікросистеми та фізична електронікаunclassified

Simulation of the Inversion of the Aluminum Profile Gradient at Liquid Phase Epitaxy of GaAl(P, As, Sb) Heterostructures

Dombrougov¹

2019

Mìkrosist. elektron. akust.

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Кафедра микроэлектроники http://me.kpi.ua Национальный технический университет Украины «Киевский политехнический институт имени Игоря Сикорского» Киев, Украина Анотация-Исследуется явление инверсии градиента профиля алюминия в пленках Ga-Al-Nm (Nm=P, As, Sb), наблюдаемое при жидкофазной эпитаксии методом принудительного охлаждения. Эпитаксия моделируется в приближении Пфанна. Жидкая фаза рассматривается как разбавленный квазирегулярный раствор, а твердая фаза-как идеальный раствор. Показано существование инверсной кривой, связывающей температуру с определенным содержанием алюминия в твердой фазе. Если при охлаждении фигуративная точка ростового раствора пересекает инверсную кривую, происходит инверсия градиента профиля алюминия: эпитаксиальная пленка, прежде нараставшая с уменьшением содержания алюминия, в дальнейшем растет с его увеличением. Установлены соотношения между видом инверсной кривой и параметрами фазовой диаграммы. Показана принципиальная возможность выращивания в ходе единого технологического процесса планарных гетероструктур Ga-Al-P и Ga-Al-As (но не Ga-Al-Sb), пригодных для изготовления микроэлектронных волноводных устройств. Библ. 22, рис. 9, табл. 1. Ключевые слова-жидкофазная эпитаксия; принудительное охлаждение; твердые растворы А 3 В 5 ; Ga-Al-P; Ga-Al-As; Ga-Al-Sb; инверсная кривая; планарные волноводные структуры.

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“…Due to the difference in lattice constants, it is difficult to homogenously deposit films onto a substrate. Also, one can find the works on heterostructures fabrication by using the liquid phase epitaxy (LPE) methods [4][5][6][7]. It is well known that those techniques are more simple and cheap as compared with the above mentioned techniques.…”

Section: Introductionmentioning

confidence: 99%

Determination of crystallization conditions of Ge/GaAs heterostructures in scanning LPE method

Tsybulenko¹,

str.²,

Shutov³

et al. 2020

SPQEO

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We carried out the modelling of separate technological stages of scanning liquid phase epitaxy (SLPE) technique: wetting the substrate by the solution-melt using Ampere force, growing the epitaxial layer during a short-time contact between the substrate and solution-melt, and removing the solution-melt from the substrate using Ampere force as well. The modelling was carried out for the case of Ge layers growing on GaAs substrate from GaGe solution-melt at the temperature 500 °C. We have ascertained that the Peltier effect and Joule heating practically have no effect on the growth pattern and under certain conditions could be even diminished. The influence of electromigration and convection in the solution-melt can be neglected. It has been shown that the basic technological parameters of SLPE process are as follows: the initial temperatures and sizes of the substrate and the growing vessel, the conditions of heat removal from the substrate back side and the time of the process. It has been also shown that the major contribution into the epitaxial layer thickness distribution over the substrate surface has been made by the heat distribution in the cooled substrate.

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LPE growth and optical characteristics of GaAs 1− x Sb x epilayer

Cited by 8 publications

References 26 publications

Rapid Scale‐up Room‐temperature Synthesis of Cu‐BTC and Its Adsorption Properties for Light Hydrocarbons

Rapid Scale‐up Room‐temperature Synthesis of Cu‐BTC and Its Adsorption Properties for Light Hydrocarbons

Simulation of the Inversion of the Aluminum Profile Gradient at Liquid Phase Epitaxy of GaAl(P, As, Sb) Heterostructures

Determination of crystallization conditions of Ge/GaAs heterostructures in scanning LPE method

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